Hole mobility and velocity are extracted from scaled strained-Si 0.45 Ge 0.55 channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained-Si 0.45 Ge 0.55 channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for shortchannel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of 110 uniaxial compressive strain to Si 0.45 Ge 0.55 can result in a more substantial increase in velocity relative to relaxed Si.