The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ∼2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were fabricated with a Si thickness of ∼8 nm and NW widths in the range of 50 nm down to 8 nm. The GAA strained-Si MOSFETs show excellent subthreshold swing and cutoff behavior, and approximately two times current drive and intrinsic transconductance enhancement compared to similar unstrained Si devices.
Magnetic
tunnel junctions operating in the superparamagnetic regime
are promising devices in the field of probabilistic computing, which
is suitable for applications like high-dimensional optimization or
sampling problems. Further, random number generation is of interest
in the field of cryptography. For such applications, a device’s
uncorrelated fluctuation time-scale can determine the effective system
speed. It has been theoretically proposed that a magnetic tunnel junction
designed to have only easy-plane anisotropy provides fluctuation rates
determined by its easy-plane anisotropy field and can perform on a
nanosecond or faster time-scale as measured by its magnetoresistance’s
autocorrelation in time. Here, we provide experimental evidence of
nanosecond scale fluctuations in a circular-shaped easy-plane magnetic
tunnel junction, consistent with finite-temperature coupled macrospin
simulation results and prior theoretical expectations. We further
assess the degree of stochasticity of such a signal.
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