Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

Abstract

Hole mobility and velocity are extracted from scaled strained-Si 0.45 Ge 0.55 channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained-Si 0.45 Ge 0.55 channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for shortchannel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of 110 uniaxial compressive strain to Si 0.45 Ge 0.55 can result in a more substantial increase in velocity relative to relaxed Si.

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

“…2 One of the challenges for the SiGe devices poses the formation of germanosilicide with pristine electrical and structural properties, namely, a low electrical resistivity, an abrupt and uniform interface to SiGe, as well as a low contact resistance.…”

Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension

“…The piezoresistance coefficient of a longitudinal configuration of the [1 1 0] p-type strained SiGe channel is positive (125 GPa), whereas that of the transverse configuration is negative (À52 GPa) [5]. Moreover, the large and small W/L ratios indicate that the channels are transverse configuration dominant ( Fig.…”

“…The strained layer enhances the hole mobility and is compatible with the CMOS process. Many studies have reported that a long p-channel is enhanced more than a short channel is [1][2][3][4][5]. Increasing the channel length augments the hole velocity and mobility in a SiGe channel [1].…”

“…Increasing the channel length augments the hole velocity and mobility in a SiGe channel [1]. Long channels are not well defined, although these channels are valid from 10 lm to tens of nanometers [1][2][3][4][5]. Aside from channel length, Bedell et al considered channel width as another factor that may determine the drive current in SiGe and Ge channels [2].…”

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

“…≡D lattice [10] ) unless CC License in place (see abstract In Equation 10, the degree of relaxation R appears in two places, (1 − R) 2 in the large parenthesis for the driving force change and (1 − R) in the exponent term for the interdiffusivity change. When the R value equals 1, we can see that the apparent interdiffusivity equalsD relax , where there is no strain impact.…”