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In this paper, β-Ga 2 O 3 films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition. The impact of oxygen flow rate on crystalline quality, surface morphology, optical transmittance, and growth rate were systematically investigated. X-ray diffraction revealed that β-Ga 2 O 3 films preferentially grew along (−201) crystal plane family when grown on sapphire substrates, and the full-width at half maximum indicated that the crystal quality of β-Ga 2 O 3 film was improved by increasing the oxygen flow rate. The oxygen flow rate greatly influenced the surface morphology and growth rate, and the optical band gaps of β-Ga 2 O 3

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β-(Al x Ga1–x )2O3 films were deposited on c-plane sapphire substrates by metal–organic chemical vapor deposition. Triethylgallium (TEGa), trimethylaluminum (TMAl), and O2 were used as Ga, Al, and O sources, respectively. (−201), (−402), and (−603) diffraction peaks of β-(Al x Ga1–x )2O3 films were observed. The X-ray diffraction peaks shifted to larger diffraction angles and were broadened with the increasing TMAl flow rate or the TMAl/(TMAl + TEGa) flow rate ratio, and the optical band gap was effectively improved. The β-(Al x Ga1–x )2O3 films deposited under different temperatures were further investigated. At 600 °C, Al atoms were more easily incorporated into the crystal lattice, and the optical band gap was improved to 5.73 eV. At 800 and 900 °C, the β-(Al x Ga1–x )2O3 films existed as polycrystalline materials.