Solar-blind photodetectors fabricated on β-Ga2O3 films deposited on 6° off-angled sapphire substrates

Hu, Zhiguo; Cheng, Qian; Zhang, Tao; Zhang, Yuxuan; Xie, Tian; Zhang, Yachao; Feng, Qian; Wang, Xing; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.jlumin.2022.119596

Cited by 12 publications

(5 citation statements)

References 39 publications

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“…Figure illustrates the XPS results of films synthesized under various oxygen conditions. In Figure a, the spectroscopic analysis reveals the presence of multiple photoelectron lines, including Ga 2p, Ga 3s, Ga 3d, Ga 3p, C 1s, and O 1s . Additionally, Auger lines such as Ga-LMM and the O-KLL are also detected.…”

Section: Resultsmentioning

confidence: 93%

“…In Figure 7a, the spectroscopic analysis reveals the presence of multiple photoelectron lines, including Ga 2p, Ga 3s, Ga 3d, Ga 3p, C 1s, and O 1s. 33 surface. 34,35 For precise peak position analysis, calibration was performed using the C 1s benchmark energy of 284.6 eV.…”

Section: Resultsmentioning

confidence: 99%

“…In Figure 7a, the spectroscopic analysis reveals the presence of multiple photoelectron lines, including Ga 2p, Ga 3s, Ga 3d, Ga 3p, C 1s, and O 1s. 33 Additionally, Auger lines such as Ga-LMM and the O-KLL are also detected. The source of the C 1s signals is attributed to hydrocarbons and carbon dioxide adsorbed on the film's surface.…”

Section: Resultsmentioning

confidence: 99%

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Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Li,

Wang

et al. 2023

Crystal Growth & Design

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In this study, thin films of Ga 2 O 3 were fabricated on sapphire substrates utilizing metal−organic chemical vapor deposition technology, with deposition conducted at a temperature of 400 °C. The investigation focused on examining the influence of oxygen on the surface morphology, phase transition, and optical characteristics of Ga 2 O 3 films synthesized at relatively low temperatures. X-ray diffraction tests indicated that all films were polycrystalline and had mixed β and ε phases. With an increase in oxygen flow rate from 1400 to 1800 sccm, β-Ga 2 O 3 became the dominant material. Atomic force microscope analysis showed that the root-mean-square roughness had decreased. Film thicknesses, as measured by scanning electron microscopy, were 285.3, 257.6, 243.2, and 254.2 nm, respectively. The high-resolution transmission electron microscope confirmed a mixed-phase structure at an oxygen rate of 2100 sccm. Moreover, the X-ray photoelectron spectroscopy results show that increasing the oxygen flow rate from 1400 to 1800 sccm is effective in reducing the oxygen vacancies and defects in the films. However, excessive oxygen flow (2100 sccm) leads to the exacerbation of prereaction and the deterioration of the film's crystalline quality.

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Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

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Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Li,

Wang

et al. 2023

Crystal Growth & Design

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“…The atomic ratio of In and Ga is calculated by the following formula n i n j = I i / S i I j / S j where n i / n j represents the atomic ratio of the element; I i and I j represent the fitting area of the element; and S i and S j are the sensitivity factors of the element. The fitting areas of In 3d and Ga 3d peaks in XPS were calculated by software.…”

Section: Resultsmentioning

confidence: 99%

InGaO₃ Nanowire Networks for Deep Ultraviolet Photodetectors

et al. 2023

ACS Appl. Nano Mater.

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Wide band gap semiconductor nanomaterials have great research prospects in power semiconductor devices, radio frequency devices, optoelectronic sensor devices, and so on. Among them, gallium oxide is considered as the representative material of wide band gap semiconductor nanomaterials as a deep ultraviolet (UV) photoelectric sensing device because of its 4.9 eV band gap width. However, the traditional synthesis of this kind of metal oxide semiconductor nanomaterials by the chemical vapor deposition (CVD) method still has some problems. The experimental process is not easy to achieve due to the high temperature of 960 °C, and the lower photocurrent makes it difficult to read the photoelectric signal for subsequent devices because of the optical response current of the order of nanoampere. In this work, gallium antimonide and indium antimonide were selected as the nutrition reaction materials, while oxygen is used as the oxide materials. InGaO 3 nanowire network materials were prepared at a lower temperature of 700 °C and a lower working pressure of 0.2 kPa, the deep UV photoelectric response of the optoelectronic devices was measured, and high performance was obtained at 5 V bias, like at a power of 0.64 μW/cm 2 , the response is 80.1 A/W, detection is 1.03 × 10 14 , and the external quantum efficiency is 3.9 × 10 4 . Especially, the photoelectric current 34.1 μA is far larger than that of the level of several nanoampere traditional gallium oxide devices. Its reaction principle is that In and Ga metal nucleate and oxidize on the substrate to form InGaO 3 nanowires after antimonide decomposition at 700 °C temperature, which is lower than 960 °C of the traditional CVD reaction method. This mechanism is different from that of traditional graphite and oxide powder reduction, which can save energy. In a word, this research has invented a method for preparing indium doping gallium oxide nanomaterials, which provides a reference for rapid preparation of response materials and low-energy consumption for deep UV photoelectric devices.

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“…[9][10][11][12] Ga 2 O 3 has six different crystal structures, including a-, b-, g-, d-, e-, and k-Ga 2 O 3 . [14][15][16][17] Among them, the most stable crystal structure is b-Ga 2 O 3 , 18,19 whereas e-Ga 2 O 3 is the metastable phase second only to b-Ga 2 O 3 . 20,21 Compared to b-Ga 2 O 3 , e-Ga 2 O 3 has a similar wide bandgap (B4.9 eV), higher lattice symmetry, lower anisotropic crystal structure, and lower growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Sun,

Liu,

Chen

et al. 2024

J. Mater. Chem. C

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Solar-blind photodetectors fabricated on β-Ga2O3 films deposited on 6° off-angled sapphire substrates

Cited by 12 publications

References 39 publications

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

InGaO₃ Nanowire Networks for Deep Ultraviolet Photodetectors

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

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Solar-blind photodetectors fabricated on β-Ga2O3 films deposited on 6° off-angled sapphire substrates

Cited by 12 publications

References 39 publications

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

InGaO3 Nanowire Networks for Deep Ultraviolet Photodetectors

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

Contact Info

Product

Resources

About

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

InGaO₃ Nanowire Networks for Deep Ultraviolet Photodetectors

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity