Metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films. The responsivity of the photodetector can reach 26 000 A/W at 8 V bias, which is the highest value ever reported for a semiconductor ultraviolet photodetector. The origin of the high responsivity has been attributed to the carrier-trapping process occurred in the metal-semiconductor interface, which has been confirmed by the asymmetric barrier height at the two sides of the metal-semiconductor interdigital electrodes. The results reported in this paper provide a way to high responsivity UV photodetectors, which thus may address a step toward future applications of UV photodetectors.
Ultraviolet photodetectors (PDs) have been fabricated from p-ZnO:(Li,N)/n-ZnO structures in this Letter. The PDs can operate without any external power supply and show response only to a very narrow spectrum range. The self-power character of the devices is due to the built-in electric field in the p-n junctions that can separate the photogenerated electrons and holes while the high spectrum-selectivity has been attributed to the filter effect of the neutral region in the ZnO:(Li,N) layer. The performance of the self-powered highly spectrum-selective PDs degrades little after five months, indicating their good reliability.
Wide band gap semiconductor nanomaterials have great research prospects in power semiconductor devices, radio frequency devices, optoelectronic sensor devices, and so on. Among them, gallium oxide is considered as the representative material of wide band gap semiconductor nanomaterials as a deep ultraviolet (UV) photoelectric sensing device because of its 4.9 eV band gap width. However, the traditional synthesis of this kind of metal oxide semiconductor nanomaterials by the chemical vapor deposition (CVD) method still has some problems. The experimental process is not easy to achieve due to the high temperature of 960 °C, and the lower photocurrent makes it difficult to read the photoelectric signal for subsequent devices because of the optical response current of the order of nanoampere. In this work, gallium antimonide and indium antimonide were selected as the nutrition reaction materials, while oxygen is used as the oxide materials. InGaO 3 nanowire network materials were prepared at a lower temperature of 700 °C and a lower working pressure of 0.2 kPa, the deep UV photoelectric response of the optoelectronic devices was measured, and high performance was obtained at 5 V bias, like at a power of 0.64 μW/cm 2 , the response is 80.1 A/W, detection is 1.03 × 10 14 , and the external quantum efficiency is 3.9 × 10 4 . Especially, the photoelectric current 34.1 μA is far larger than that of the level of several nanoampere traditional gallium oxide devices. Its reaction principle is that In and Ga metal nucleate and oxidize on the substrate to form InGaO 3 nanowires after antimonide decomposition at 700 °C temperature, which is lower than 960 °C of the traditional CVD reaction method. This mechanism is different from that of traditional graphite and oxide powder reduction, which can save energy. In a word, this research has invented a method for preparing indium doping gallium oxide nanomaterials, which provides a reference for rapid preparation of response materials and low-energy consumption for deep UV photoelectric devices.
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