Investigation on the β-Ga2O3 deposited on off-angled sapphire (0001) substrates

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

“…The correlation between the absorption coefficient (α) and photon energy (hν) is mathematically described as (αhν) 2 = C (hν − E g ). 41 Figure 8b illustrates this relationship graphically, where plotting (αhν) 2 against hν and extending the resulting line to the xaxis facilitates the determination of the optical bandgap (E g ) of the film. The optical bandgaps of the Ga 2 O 3 films deposited at 1400, 1600, 1800, and 2100 sccm were 4.54, 4.81, 4.89, and 4.80 eV, correspondingly.…”

(3̄10)-Oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

“…The in-plane rotational domains would influence the crystalline quality of the as-grown films. 26,32–35 In a previous work, off-angled sapphire substrates have been used to control the in-plane rotational domains and improve the crystal quality of the as-grown films. 21,32,33,35 Here, off-angled sapphire substrates are also introduced.…”

“…Off-angled (0001) sapphire substrates are utilized to control the domain growth. 21,[32][33][34][35] In our previous report, the schematically geometrical mode has been discussed and proposed that ∼7°off-angled (0001) sapphire toward the 〈112 ¯0〉 direction would make the singledomain growth of β-Ga 2 O 3 films possible and obtain higher crystal-quality β-Ga 2 O 3 films with relatively smooth surfaces. 27 In this work, the effect of growth temperatures, O 2 flowsrates, HCl flows-rates and off-angles of sapphire substrates on the crystal quality and growth orientation of heteroepitaxial β-Ga 2 O 3 films, as well as the domain growth and suppression mechanism, have been investigated systematically by analysis of the structures and microstructures.…”

“…Off-angled (0001) sapphire substrates are utilized to control the domain growth. 21,32–35 In our previous report, the schematically geometrical mode has been discussed and proposed that ∼7° off-angled (0001) sapphire toward the 〈112̄0〉 direction would make the single-domain growth of β-Ga 2 O 3 films possible and obtain higher crystal-quality β-Ga 2 O 3 films with relatively smooth surfaces. 27…”

Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

“…The highest growth rate can achieve to 10 mm/h using a TMGa precursor at a substrate temperature of 900 C [35]. T. Zhang Ma et al [36] reported highquality b-Ga 2 O 3 were heteroepitaxially grown on off-angled cplane sapphire substrates following step-flow growth mode at the lower growth pressure (20e40 Torr). Grains size and growth rate decreased with the increasing growth pressure, and beGa 2 O 3 film became more compact at higher growth pressure [37].…”