Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

Horng, Ray−Hua; Wuu, Dong−Sing; Liu, Po−Liang; Sood, Apoorva; Tarntair, Fu-Gow; Chen, Yu-Hsuan; Pratap, Singh Jitendra; Hsiao, Ching-Lien

doi:10.1016/j.mtadv.2022.100320

Cited by 10 publications

(13 citation statements)

References 43 publications

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“…The growth temperature has been optimized, and 875 °C is the best growth temperature for the Ga 2 O 3 epilayer growth in our MOCVD system. 12 The Si in situ doping layer was formed using a TEOS precursor with a 10 sccm flow rate for the n − layer and 60 sccm flow for the n + layer. In this study, a 6% lattice mismatch between the β-Ga 2 O 3 heteroepitaxial layer and sapphire substrate exists.…”

Section: Methodsmentioning

confidence: 99%

“…The device structure was grown at 875 °C on the c-plane sapphire by MOCVD, which consists of an unintentionally doped (UID) β-Ga 2 O 3 layer, a lightly doped (n – ) 30 nm thick channel layer, and a heavily (n + ) doped contact layer with 50 nm thickness. The growth temperature has been optimized, and 875 °C is the best growth temperature for the Ga 2 O 3 epilayer growth in our MOCVD system . The Si in situ doping layer was formed using a TEOS precursor with a 10 sccm flow rate for the n – layer and 60 sccm flow for the n + layer.…”

Section: Methodsmentioning

confidence: 99%

“…Consequently, β-Ga 2 O 3 has emerged as a next-generation material for power device applications, namely, the field-effect transistor − and Schottky barrier diode. − Its outstanding material characteristics and low crystal growth cost can solve critical and ongoing problems for both SiC- and GaN-based devices. − For β-Ga 2 O 3 , costs are an order of magnitude lower, and films can be grown heteroepitaxially by different methods . Owing to these promising economic factors, in this study, high-quality heteroepitaxial β-Ga 2 O 3 layers are grown by metal–organic chemical vapor deposition (MOCVD) on the sapphire for the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) …”

Section: Introductionmentioning

confidence: 97%

“…11 Owing to these promising economic factors, in this study, high-quality heteroepitaxial β-Ga 2 O 3 layers are grown by metal−organic chemical vapor deposition (MOCVD) on the sapphire for the fabrication of metal-oxide-semiconductor fieldeffect transistors (MOSFETs). 12 Most state-of-the-art n-channel MOSFETs are produced by the inclusion of an unintentional doped (UID) buffer layer suppressing Fe diffusion from the homoepitaxy semi-insulating Fe-doped Ga 2 O 3 substrate through a defect-mediated path generated by the Si-ion implantation damage. 13,14 On the other hand, for Ga 2 O 3 heteroepitaxy on sapphire, problems such as Al diffusion from the substrate 15 and lattice mismatch are still to be solved.…”

Section: Introductionmentioning

confidence: 99%

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Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Lu,

Tarntair,

Kao

et al. 2024

ACS Appl. Electron. Mater.

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β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with various unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅ 01) beneath the Si tetraethoxysilane (TEOS)-doped film were grown by metal− organic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness causes the MOSFET turn-on current to increase from 1.7 to 700 μA/mm, R ON to decrease from 1.13 MΩ•mm to 3.8 kΩ•mm, and breakdown voltage to decrease from 910 to 240 V. Through X-ray photoelectron spectroscopy (XPS), we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies. KEYWORDS: β-Ga 2 O 3 , metal-oxide-semiconductor field-effect transistors (MOSFETs), unintentionally doped (UID) layers, tetraethoxysilane (TEOS), metal−organic chemical vapor deposition, X-ray photoelectron spectroscopy (XPS)

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Lu,

Tarntair,

Kao

et al. 2024

ACS Appl. Electron. Mater.

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“…The current growth process has been optimized. Detailed crystallinity of the Ga 2 O 3 has been studied in our previous publication [ 15 ]. The tetraethyl orthosilicate (TEOS) precursor used the n-type dopant source.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

Ngo

Tarntair

et al. 2023

Discover Nano

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In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs.

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Material Properties of n‐Type β‐Ga₂O₃ Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Tarntair,

Huang,

Rana

et al. 2024

Adv Elect Materials

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In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tetraethoxysilane (TEOS) molar flow rate of 2.23 × 10−7 mol min−1 but increased with higher flow rates. The dopant concentrations of Ga2O3 grown at 825 °C with TEOS molar flows of 2.23 × 10−7, 4.47 × 10−7, and 6.69 × 10−7 mol min−1 are measured to be 5.5 × 1019, 1.1 × 1020, and 1.4 × 1020 atom cm−3, respectively, using secondary ion mass spectra and Hall measurements reveal n‐type nature with carrier concentrations of 6.5 × 1017, 3.2 × 1018, and 3.9 × 1018 atom/cm3 , respectively. To increase Si dopant activation, Ga2O3 growth temperature is raised to 875 °C. The result suggests a higher growth temperature can contribute to a greater probability of Si substitution on Ga lattice sites, which further reduces the resistivity of Ga2O3 epilayer. Moreover, results are compared with theoretical Density Functional Theory studies.

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Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

Cited by 10 publications

References 43 publications

Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

Material Properties of n‐Type β‐Ga₂O₃ Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

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Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

Cited by 10 publications

References 43 publications

Undoped β-Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Undoped β-Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

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Product

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Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Material Properties of n‐Type β‐Ga₂O₃ Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition