Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

Abstract

In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs.

Undoped β-Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

“…β-Ga 2 O 3 is an ultrawide band gap material ( E g = 4.8 eV) and possesses a critical electric field value of 8 MV/cm, superior to more conventional semiconductors such as Si, GaN, and SiC. Consequently, β-Ga 2 O 3 has emerged as a next-generation material for power device applications, namely, the field-effect transistor − and Schottky barrier diode. − Its outstanding material characteristics and low crystal growth cost can solve critical and ongoing problems for both SiC- and GaN-based devices. − For β-Ga 2 O 3 , costs are an order of magnitude lower, and films can be grown heteroepitaxially by different methods . Owing to these promising economic factors, in this study, high-quality heteroepitaxial β-Ga 2 O 3 layers are grown by metal–organic chemical vapor deposition (MOCVD) on the sapphire for the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) …”

Epitaxial Growth of p-Type Cu-Doped Ga2O3 Nanoarrays on MgO Substrates

“…However, there are rare reports on the preparation of Cu-doped β-Ga 2 O 3 nanoarrays by chemical vapor deposition (CVD). Additionally, most of the substrates used for epitaxial growth of Ga 2 O 3 materials are sapphire substrates. ,− There are few studies on the use of MgO, which is physicochemically stable and has a much lower lattice mismatch, as the substrate for epitaxial growth of Ga 2 O 3 . This study utilized the vapor–liquid–solid (VLS) growth mechanism to build neatly aligned Cu-doped β-Ga 2 O 3 nanoarrays on MgO substrates using a simple and inexpensive CVD method.…”

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

“…These photodetectors vary according to their structures, including metal–semiconductor–metals (MSMs), heterojunctions, Schottky barrier diodes (SBDs), and others . Besides, they can work as a single device or together as an array. − Such a diversity of the device structure is possible because Ga 2 O 3 exists in five crystalline phases, α, β, γ, δ, and ε, all of which can be grown using various techniques, including laser molecular beam epitaxy (laser-MBE), pulsed laser deposition (PLD), magnetron sputtering, metal–organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), halide vapor-phase epitaxy (HVPE), and mist chemical vapor deposition (mist-CVD), providing a convenient way for its development in relevant devices.…”