Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Zhang, Tao; Li, Yifan; Cheng, Qian; Hu, Zhiguo; Ma, Jinbang; Yao, Yixin; Cui, Chenxia; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.spmi.2021.107053

Cited by 3 publications

(3 citation statements)

References 23 publications

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“…By increasing the oxygen flow, the ε-Ga 2 O 3 (0002) and ε-Ga 2 O 3 (0004) diffraction peaks were effectively eliminated at oxygen flow rates of 1600 and 1800 sccm, respectively, and the diffraction peaks reappeared when the oxygen flow rate reached 2100 sccm. Besides, in all curves, there are two remaining faint diffraction peaks located at 30.4 and 60.7°, which can be attributed to (004), and (512) β-Ga 2 O 3 , respectively . Apparently, the films appear to consist of a blend of β-Ga 2 O 3 and ε-Ga 2 O 3 phase, and it has not obtained pure ε-Ga 2 O 3 through control temperature and oxygen flow.…”

Section: Resultsmentioning

confidence: 92%

“…Besides, in all curves, there are two remaining faint diffraction peaks located at 30.4 and 60.7°, which can be attributed to (004), and (512) β-Ga 2 O 3 , respectively. 31 Apparently, the films appear to consist of a blend of β-Ga 2 O 3 and ε-Ga 2 O 3 phase, and it has not obtained pure ε-Ga 2 O 3 through control temperature and oxygen flow. This could be attributed to a smaller lattice mismatch between the β-Ga 2 O 3 films and the sapphire substrate during the film growth, in contrast to ε-Ga 2 O 3 , and it is difficult to avoid forming a nucleus to form a β-Ga 2 O 3 in the thin film and the substrate interface.…”

Section: Resultsmentioning

confidence: 96%

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Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Li,

Wang

et al. 2023

Crystal Growth & Design

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In this study, thin films of Ga 2 O 3 were fabricated on sapphire substrates utilizing metal−organic chemical vapor deposition technology, with deposition conducted at a temperature of 400 °C. The investigation focused on examining the influence of oxygen on the surface morphology, phase transition, and optical characteristics of Ga 2 O 3 films synthesized at relatively low temperatures. X-ray diffraction tests indicated that all films were polycrystalline and had mixed β and ε phases. With an increase in oxygen flow rate from 1400 to 1800 sccm, β-Ga 2 O 3 became the dominant material. Atomic force microscope analysis showed that the root-mean-square roughness had decreased. Film thicknesses, as measured by scanning electron microscopy, were 285.3, 257.6, 243.2, and 254.2 nm, respectively. The high-resolution transmission electron microscope confirmed a mixed-phase structure at an oxygen rate of 2100 sccm. Moreover, the X-ray photoelectron spectroscopy results show that increasing the oxygen flow rate from 1400 to 1800 sccm is effective in reducing the oxygen vacancies and defects in the films. However, excessive oxygen flow (2100 sccm) leads to the exacerbation of prereaction and the deterioration of the film's crystalline quality.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 96%

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Li,

Wang

et al. 2023

Crystal Growth & Design

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“…20,21 Compared to b-Ga 2 O 3 , e-Ga 2 O 3 has a similar wide bandgap (B4.9 eV), higher lattice symmetry, lower anisotropic crystal structure, and lower growth temperature. [22][23][24][25] In recent years, research studies on solar-blind UV detectors based on e-Ga 2 O 3 thin films have begun to rise and are receiving increasing attention. [26][27][28] Although many efforts are being dedicated towards developing high-performance e-Ga 2 O 3 thin film solar-blind detectors, it is still a big challenge to simultaneously achieve low dark current, high specific detectivity, high UVvisible rejection ratio and quick response speed.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Sun,

Liu,

Chen

et al. 2024

J. Mater. Chem. C

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High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

Fei,

Chen,

Chen

et al. 2023

Coatings

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High-temperature annealing has been regarded as an effective technology to improve the performance of Ga2O3-based solar-blind photodetectors (SBPDs). However, as a metastable phase, ε-Ga2O3 thin film may undergo phase transformation during post-annealing. Therefore, it is necessary to investigate the effect of the phase transition and the defect formation or desorption on the performance of photodetectors during post-annealing. In this work, the ε-Ga2O3 thin films were grown on c-plane sapphire with a two-step method, carried out in a metal-organic chemical vapor deposition (MOCVD) system, and the ε-Ga2O3 metal-semiconductor-metal (MSM)-type SBPDs were fabricated. The effects of post-annealing on ε-Ga2O3 MSM SBPDs were investigated. As a metastable phase, ε-Ga2O3 thin film undergoes phase transition when the annealing temperature is higher than 700 °C. As result, the decreased crystal quality makes an SBPD with high dark current and long response time. In contrast, low-temperature annealing at 640 °C, which is the same as the growth temperature, reduces the oxygen-related defects, as confirmed by X-ray photoelectron spectroscopy (XPS) measurement, while the good crystal quality is maintained. The performance of the SBPD with the post-annealing temperature of 640 °C is overall improved greatly compared with the ones fabricated on the other films. It shows the low dark current of 0.069 pA at 10 V, a rejection ratio (Rpeak/R400) of 2.4 × 104 (Rpeak = 230 nm), a higher photo-to-dark current ratio (PDCR) of 3 × 105, and a better time-dependent photoresponse. These results indicate that, while maintaining no phase transition, post-annealing is an effective method to eliminate point defects such as oxygen vacancies in ε-Ga2O3 thin films and improve the performance of SBPDs.

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Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Cited by 3 publications

References 23 publications

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

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Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Cited by 3 publications

References 23 publications

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

Contact Info

Product

Resources

About

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity