Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD

Zhang, Tao; Li, Yifan; Cheng, Qian; Hu, Zhiguo; Ma, Jinbang; Yao, Yixin; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.ceramint.2021.12.031

Cited by 7 publications

(4 citation statements)

References 38 publications

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“…The AFM images reveal that the FME-grown α-Ga 2 O 3 film has a smoother surface compared to the reference α-Ga 2 O 3 film. It can be inferred that FME growth significantly improves the surface morphology of the α-Ga 2 O 3 epilayer by enhancing the two-dimensional growth mode through increasing the lateral migration of atoms on the surface and reducing prereactions between precursors . Overall, the results show that the optimized FME conditions effectively lead to the growth of smooth and crack-free α-Ga 2 O 3 films of high material quality.…”

Section: Resultsmentioning

confidence: 76%

“…It can be inferred that FME growth significantly improves the surface morphology of the α-Ga 2 O 3 epilayer by enhancing the two-dimensional growth mode through increasing the lateral migration of atoms on the surface and reducing prereactions between precursors. 31 Overall, the results show that the optimized FME conditions effectively lead to the growth of smooth and crack-free α-Ga 2 O 3 films of high material quality. Optical measurements are crucial for determining the optical parameters of films, such as the optical absorption coefficient and energy band gap.…”

Section: ■ Results and Discussionmentioning

confidence: 78%

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Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Lee,

Cha,

Cho

et al. 2023

Crystal Growth & Design

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In this study, halide vapor phase epitaxy with flow modulation epitaxy (FME) was used to grow a 10 μm thick singlecrystalline α-Ga 2 O 3 epilayer on a sapphire substrate. By optimizing the interval time of the gas, highly crystalline thick α-Ga 2 O 3 epitaxial layers can be grown without any cracks. The as-grown α-Ga 2 O 3 was evaluated using scanning electron microscopy and atomic force microscopy to analyze the improvement in the surface morphology and roughness of the epitaxial layer, while X-ray diffraction was used to evaluate the crystallinity. Under optimized O 2 FME conditions, the thick α-Ga 2 O 3 film exhibited a lower full width at half-maximum (fwhm) of 779 arcsec for the (101̅ 4) plane compared to the (101̅ 4) plane fwhm values of 1137 and 925 arcsec obtained for the reference and HCl FME conditions, respectively. The results indicated that the α-Ga 2 O 3 epitaxial layer grown under the O 2 FME conditions exhibited the best quality. This confirms that the current approach to growing high-quality α-Ga 2 O 3 thick films is stable.

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Section: Resultsmentioning

confidence: 76%

Section: ■ Results and Discussionmentioning

confidence: 78%

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Lee,

Cha,

Cho

et al. 2023

Crystal Growth & Design

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“…MOCVD is a vapor phase growing method with Ar or N 2 as the carrier gas transporting the precursors such as metalorganics and oxygen in the reaction chamber. In the epitaxy of β-Ga 2 O 3 , TMGa [34] (or TEGa [35] ), and oxygen are usually selected as the metalorganic precursor and oxide precursor, respectively. After entering the chamber, the metalorganic and oxide precursors are absorbed on the substrate and start to react with each other.…”

Section: Metalorganic Chemical Vapor Deposition Of Ga 2 Omentioning

confidence: 99%

“…Hence, the high-quality β-Ga 2 O 3 layers now are mainly fabricated via TEGa [9] . But Seryogin et al later proved that high-quality β-Ga 2 O 3 layers could also be obtained using TMGa [34] . In their study, a record low-temperature electron mobility exceeding 23 000 cm 2 /(V•s) at 32 K has been achieved.…”

Section: Metalorganic Chemical Vapor Deposition Of Ga 2 Omentioning

confidence: 99%

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Li¹,

Zhang²,

Zhang³

et al. 2023

J. Semicond.

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Power electronic devices are of great importance in modern society. After decades of development, Si power devices have approached their material limits with only incremental improvements and large conversion losses. As the demand for electronic components with high efficiency dramatically increasing, new materials are needed for power device fabrication. Beta-phase gallium oxide, an ultra-wide bandgap semiconductor, has been considered as a promising candidate, and various β-Ga2O3 power devices with high breakdown voltages have been demonstrated. However, the realization of enhancement-mode (E-mode) β-Ga2O3 field-effect transistors (FETs) is still challenging, which is a critical problem for a myriad of power electronic applications. Recently, researchers have made some progress on E-mode β-Ga2O3 FETs via various methods, and several novel structures have been fabricated. This article gives a review of the material growth, devices and properties of these E-mode β-Ga2O3 FETs. The key challenges and future directions in E-mode β-Ga2O3 FETs are also discussed.

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Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface

Wang,

Li,

Zhang

et al. 2023

Ceramics International

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Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD

Cited by 7 publications

References 38 publications

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface

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Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD

Cited by 7 publications

References 38 publications

Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface

Contact Info

Product

Resources

About

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties