Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface

Wang, Yao; Li, Jiale; Zhang, Tao; Li, Wenji; Feng, Qian; Zhang, Yachao; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.ceramint.2023.09.077

Cited by 3 publications

(2 citation statements)

References 33 publications

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“…With the rapid development of the semiconductor industry, this industry has increasingly higher requirements for the surface quality of semiconductor substrates [1]. The substrate is the base of the semiconductor devices; its surface quality has a great impact on the growth of epitaxial layers and the processing, preparation, and performance of chips and optoelectronic semiconductor devices [2][3][4][5]. The substrate flatness or total thickness variation (TTV), which is used to describe the thickness variation at various locations on the substrate, is one of the main indicators to evaluate the surface quality of semiconductor substrates [6].…”

Section: Introductionmentioning

confidence: 99%

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

Zhong,

He,

Deng

et al. 2024

Photonics

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The flatness of semiconductor substrates is an important parameter for evaluating the surface quality of semiconductor substrates. However, existing technology cannot simultaneously achieve high measurement efficiency, large-range thickness measurement, and nanometer-level measurement accuracy in the thickness measurement of semiconductor substrates. To solve the problems, we propose to apply the method that combines spectral-domain optical coherence tomography (SD-OCT) with the Hanning-windowed energy centrobaric method (HnWECM) to measure the thickness of semiconductor substrates. The method can be employed in the full-chip thickness measurement of a sapphire substrate, which has a millimeter measuring range, nanometer-level precision, and a sampling rate that can reach up to 80 kHz. In this contribution, we measured the full-chip thickness map of a sapphire substrate by using this method and analyzed the machining characteristics. The measurement results of a high-precision mechanical thickness gauge, which is widely used for thickness measurement in the wafer fabrication process, were compared with the proposed method. The difference between these two methods is 0.373%, which explains the accuracy of the applied method to some extent. The results of 10 sets of repeatability experiments on 250 measurement points show that the maximum relative standard deviation (RSD) at this point is 0.0061%, and the maximum fluctuation is 71.0 nm. The above experimental results prove that this method can achieve the high-precision thickness measurement of the sapphire substrate and is of great significance for improving the surface quality detection level of semiconductor substrates.

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Section: Introductionmentioning

confidence: 99%

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

Zhong,

He,

Deng

et al. 2024

Photonics

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“…This is due to suppression of desorption of molecules and providing sufficient time for the migration and reaction to occur with the influx of precursor molecules over the thin film/islands present over the substrate, thereby facilitating the micro-islands to merge and form better film leading to a 2D and -3D growth. [21] Zhang et al reported a decrease in root mean square (RMS) roughness (25.4-13 nm) of thin films grown using low-pressure MOCVD as the growth temperature is increased from 600 to 800 °C. The increase in temperature enables adatom migration on the substrate surface, which improves 2D growth, resulting in smoother films with lower RMS values.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Ganguly,

Nama Manjunatha,

Paul

2023

Physica Rapid Research Ltrs

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In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated, compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation is optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. Ultraviolet–visible–near‐infrared spectroscopy and photo response of thin film unveil that gallium oxide thin film is responsive to ultraviolet wavelengths including deep ultraviolet‐C and ultraviolet‐B bands and the mist‐generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It is observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultrasmooth thin film with root mean square value of 0.628 nm; which is closer and/or better than conventional semiconductor thin‐film deposition processes used for depositing Ga2O3.

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Radiation damage effects on electronic and optical properties of β-Ga2O3 from first-principles

Zhang,

Liang,

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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β-Ga2O3 with an ultra-wide bandgap demonstrates great promise in applications of space missions as power electronics and solar-blind photodetector. Unraveling the radiation damage effects on its material properties is of crucial importance, especially for improving the radiation tolerance of Ga2O3-based devices. Herein, we evaluate the formation energy of gallium and oxygen vacancy defects and comprehensively investigate their influence on the electronic and optical properties of β-Ga2O3 using first-principles calculations. Ga vacancies act as deep acceptors and produce p-type defects in β-Ga2O3, while the defective Ga2O3 with O vacancies exhibits the n-type characteristics. A semimetal characteristic is observed in the defective Ga2O3 with Ga vacancies, and an apparent optical absorption peak in the infrared spectral range emerges. Moreover, the self-compensation effect emerges when β-Ga2O3 contains both Ga vacancies and O vacancies, leading to the reduced absorption peak. The doping effect on the defect formation energy of β-Ga2O3 is also investigated, and Ga vacancies are found to be easily formed in the case of In doped β-Ga2O3 (InGa2O3) compared to the undoped β-Ga2O3, while O vacancies are much harder to form. This work provides insights into how gallium and oxygen vacancy defects alter electronic and optical properties of β-Ga2O3, seeking to strengthen its radiation tolerance.

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Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface

Cited by 3 publications

References 33 publications

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Radiation damage effects on electronic and optical properties of β-Ga2O3 from first-principles

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