High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

Abstract

The flatness of semiconductor substrates is an important parameter for evaluating the surface quality of semiconductor substrates. However, existing technology cannot simultaneously achieve high measurement efficiency, large-range thickness measurement, and nanometer-level measurement accuracy in the thickness measurement of semiconductor substrates. To solve the problems, we propose to apply the method that combines spectral-domain optical coherence tomography (SD-OCT) with the Hanning-windowed energy centrobaric method (HnWECM) to measure the thickness of semiconductor substrates. The method can be employed in the full-chip thickness measurement of a sapphire substrate, which has a millimeter measuring range, nanometer-level precision, and a sampling rate that can reach up to 80 kHz. In this contribution, we measured the full-chip thickness map of a sapphire substrate by using this method and analyzed the machining characteristics. The measurement results of a high-precision mechanical thickness gauge, which is widely used for thickness measurement in the wafer fabrication process, were compared with the proposed method. The difference between these two methods is 0.373%, which explains the accuracy of the applied method to some extent. The results of 10 sets of repeatability experiments on 250 measurement points show that the maximum relative standard deviation (RSD) at this point is 0.0061%, and the maximum fluctuation is 71.0 nm. The above experimental results prove that this method can achieve the high-precision thickness measurement of the sapphire substrate and is of great significance for improving the surface quality detection level of semiconductor substrates.