Investigation of the surface optimization of β-Ga2O3 films assisted deposition by pulsed MOCVD

Zhang, Tao; Cheng, Qian; Li, Yifan; Hu, Zhiguo; Ma, Jinbang; Yao, Yixin; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.scriptamat.2022.114623

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…In addition, it can aggravate the leakage current of the metal electrode. 29,30 Thus, the morphology of the surface of the α-Ga 2 O 3 epilayer is an important aspect of the material quality. Figure 3g− The AFM images reveal that the FME-grown α-Ga 2 O 3 film has a smoother surface compared to the reference α-Ga 2 O 3 film.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…High surface roughness in an epilayer can cause increased carrier scattering and greatly reduce the mobility of the carriers. In addition, it can aggravate the leakage current of the metal electrode. , Thus, the morphology of the surface of the α-Ga 2 O 3 epilayer is an important aspect of the material quality. Figure g–i shows the AFM images and root-mean-square (RMS) values for thick α-Ga 2 O 3 films grown under different FME conditions as measured on a 5 × 5 μm 2 area.…”

Section: Resultsmentioning

confidence: 99%

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Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Lee,

Cha,

Cho

et al. 2023

Crystal Growth & Design

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In this study, halide vapor phase epitaxy with flow modulation epitaxy (FME) was used to grow a 10 μm thick singlecrystalline α-Ga 2 O 3 epilayer on a sapphire substrate. By optimizing the interval time of the gas, highly crystalline thick α-Ga 2 O 3 epitaxial layers can be grown without any cracks. The as-grown α-Ga 2 O 3 was evaluated using scanning electron microscopy and atomic force microscopy to analyze the improvement in the surface morphology and roughness of the epitaxial layer, while X-ray diffraction was used to evaluate the crystallinity. Under optimized O 2 FME conditions, the thick α-Ga 2 O 3 film exhibited a lower full width at half-maximum (fwhm) of 779 arcsec for the (101̅ 4) plane compared to the (101̅ 4) plane fwhm values of 1137 and 925 arcsec obtained for the reference and HCl FME conditions, respectively. The results indicated that the α-Ga 2 O 3 epitaxial layer grown under the O 2 FME conditions exhibited the best quality. This confirms that the current approach to growing high-quality α-Ga 2 O 3 thick films is stable.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Lee,

Cha,

Cho

et al. 2023

Crystal Growth & Design

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Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Fan

Zhao

Zhang

et al. 2023

Laser & Photonics Reviews

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Great progress made by heteroepitaxial growth technology encourages rapid development of III-nitride heteroepitaxial structures and their applications in extensive fields. Particularly, innate bandgap tunability of III-nitride materials renders them attractive for white light-emitting diodes (WLEDs) that are considered as next-generation solid-state lighting sources. However, commercial phosphor-converted WLEDs suffer from poor color rendering index (CRI) and intense blue component, hard to fulfill demanding requirements simultaneously for energy efficiency and healthy lighting. Here, an efficient full-spectrum WLED excited by monolithically integrated III-nitride quantum structure is reported, in which trichromatic InGaN/GaN multiple quantum wells are constructed by bandgap engineering heteroepitaxy growth allowing flexible regulation of indium composition and quantum barrier thickness to manipulate carrier transport behavior. Furthermore, relationship between structural parameters and emission characteristics as well as their impact on white light performance is systematically demonstrated. Combined with commonly used green-red phosphor mixture, the fabricated full-spectrum warm/cold WLEDs can emit broadband and continuous spectra with low-ratio blue component, first exhibiting superior CRI (> 97/98), color fidelity (97/97), saturation (100/99), and luminous efficacy (>120/140 lm W −1 ). This work demonstrates the advantages of bandgap-engineered quantum structure applied in excitation source, and opens up new avenues for the exploration of high-quality solid-state lighting.

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Growth mechanism of a batch deposited SiC coating on large-size graphite plates based on multi-scale simulation

Zheng,

Li,

et al. 2024

Journal of Crystal Growth

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Investigation of the surface optimization of β-Ga2O3 films assisted deposition by pulsed MOCVD

Cited by 4 publications

References 19 publications

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Growth mechanism of a batch deposited SiC coating on large-size graphite plates based on multi-scale simulation

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Investigation of the surface optimization of β-Ga2O3 films assisted deposition by pulsed MOCVD

Cited by 4 publications

References 19 publications

Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Growth mechanism of a batch deposited SiC coating on large-size graphite plates based on multi-scale simulation

Contact Info

Product

Resources

About

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy