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A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (VDS) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high VDS off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (EC – 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed.

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A compact and broadband 15 to 5 0 GHz resistive FET ring mixer using 0.18-,um CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port to port isolations of better than 3 0 dB from 15-50 GHz for both down and up-conversion with a chip size of 0.2 mm2• Besides, this mixer has an input PI dB of 4-1 0 dB and an IF bandwidth of 5GHz. To the author's knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technologies to date.

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This work investigates the effect of Cl 2 / Ar dry etching on p-GaN. The root-mean-square ͑rms͒ surface roughness is measured, and the depth display ͑Bearing analysis͒ is monitored. The current-voltage characteristics of etched p-GaN with Ni ͑20 nm͒ /Au ͑20 nm͒ metallization are studied. Experimental results indicate that the etching rate does not increase significantly with the Cl 2 flow rate at a constant power or chamber pressure. The Bearing ratio data exhibit a much stronger variation with etch conditions, the rms displays the same trend but to a lesser extent.