Flip-Chip-Assembled $W$-Band CMOS Chip Modules on Ceramic Integrated Passive Device With Transition Compensation for Millimeter-Wave System-in-Package Integration

Lu, Hsin-Chia; Kuo, Che-Chung; Lin, Po‐An; Tai, Chen-Fang; Chang, Yi-Long; Jiang, Yu-Sian; Tsai, Jeng-Han; Hsin, Yue-Ming; Wang, Huei

doi:10.1109/tmtt.2011.2176747

Cited by 43 publications

(12 citation statements)

References 13 publications

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“…These measured results compare favorably with other integration approaches, including flip-chip integration and split-block waveguide-MMIC transitions. Flip-chip integration has been demonstrated with insertion loss of 0.6 dB to 100 GHz at 15-dB return loss (see e.g., [11]), but typically requires high-impedance compensation sections that increase area and reduce bandwidth [12]. For split-block waveguide transitions, transition losses of approximately 1 dB have been achieved (see e.g., [13]), corresponding to a chip-to-chip loss of ∼2 dB and return losses of ∼10 dB.…”

Section: Characterization and Interconnect Performancementioning

confidence: 99%

Ultra-wide Bandwidth Inter-Chip Interconnects for Heterogeneous Millimeter-Wave and THz Circuits

Fay

Bernstein

Tian³

et al. 2016

J Infrared Milli Terahz Waves

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Heterogeneous chip-to-chip interconnects with low loss and ultra-wide bandwidths have been demonstrated. Coplanar waveguide-based interconnects between GaAs and Si die have been fabricated and characterized and the results compared to expectations from fullwave electromagnetic simulation. Broadband transmission characteristics were obtained, with insertion losses below 0.3 dB at 100 GHz and below 0.8 dB at frequencies up to 220 GHz demonstrated experimentally. The measured return loss exceeded 11.5 dB at all frequencies up to 220 GHz. The interconnects offer low latency, with a measured group delay of 0.69 ps. The measured results are in good agreement with full-wave simulations, indicating that the measured results do not suffer from significant impairments compared to theoretical predictions. The demonstrated interconnects offer an alternative to conventional approaches to millimeter-wave circuit and system integration, by enabling the compact realization of circuits in the microwave, millimeter-wave, sub-millimeter-wave, and THz frequency regimes in heterogeneous device technologies with very low chip-to-chip insertion loss.

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Section: Characterization and Interconnect Performancementioning

confidence: 99%

Ultra-wide Bandwidth Inter-Chip Interconnects for Heterogeneous Millimeter-Wave and THz Circuits

Fay

Bernstein

Tian³

et al. 2016

J Infrared Milli Terahz Waves

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“…In the past few years, many MMW transceivers are implemented with SiGe HBT and BiCMOS technologies [103,127,[206][207][208][209][210][211][212] involving the system architecture of phased array transceivers [150,[212][213][214], sub-harmonic imaging array receiver [215], FMCW radar transceivers [31,216,217], fully differential transceiver [218] and dual-frequency transceiver [103].…”

Section: Sige Mmw Transceiversmentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…W-band CMOS module using ceramic IPD has been reported [11]. Potentially SOP using silicon-based IPD could be an attractive solution to applications in this frequency range or in THz range.…”

Section: Conclusion and Prospectsmentioning

confidence: 99%