A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

Tang, Wen-Bin; Wang, Che-ming; Hsin, Yue-Ming

doi:10.1109/tmtt.2006.882411

Cited by 18 publications

(13 citation statements)

References 13 publications

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“…Note that the base resistance affects the device speed and noise behavior, and it is important for the transistors operated at high current densities [28]. In addition, R bi reduces with collector current due to current crowding effects [29]. In this work, the intrinsic base resistance is assumed to be bias-independent, which might affect the simulated f MAX , S-parameters, and output power under high bias conditions.…”

Section: A Bias-independent Parameter Extractionmentioning

confidence: 99%

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Huang

Luo

et al. 2019

IEEE Access

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Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of this work is to utilize a general dimension-reduction method to quickly and accurately construct large-signal models of semiconductor devices with consideration of thermal effects. In general, the junction voltage dimension is represented by empirical functions, whereas the junction temperature dimension is described by the first-order Taylor series approximation. The final analytical current model is a combination of two independent sets of empirical functions. These functions are constructed from pulsed I-V measurements at different ambient temperatures. The percentages of different components are controlled by the thermal level. Two commercial InGaP/GaAs heterojunction bipolar transistors are investigated to verify the effectiveness of this method. The large-signal models are implemented in Advanced Design System. Excellent agreement is achieved between measurement and simulation of the I-V characteristics, S-parameters, and power sweeps. The dimension reduction method is able to effectively reduce the number of equations and parameters because the temperature dimension is expanded by using a Taylor series. In addition, this method would be applied to the thermal modeling of various devices based on new materials or process technologies. Accordingly, the dimension reduction method is powerful and useful in fast and accurate thermal modeling of microwave semiconductor devices.

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Section: A Bias-independent Parameter Extractionmentioning

confidence: 99%

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Huang

Luo

et al. 2019

IEEE Access

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“…However, most of these modified SSEC models of AlGaN/GaN HEMTs are empirical in nature and do not provide a generalized mechanism to improve the model accuracy. In particular, the works of [17]- [24] fail to identify a generalized strategy as to how to determine the values of the additional circuit elements. Finally, the modified SSEC models improve the accuracy of the Y-parameters at the cost of increasing the model size and complexity.…”

Section: Introductionmentioning

confidence: 99%

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

Jadhav

Ozawa

Baratov

et al. 2021

IEEE J. Electron Devices Soc.

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Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency behavior (above 20 GHz) of the device. In this work, a modified small signal equivalent circuit model of AlGaN/GaN MOS-HEMTs is presented. The key feature of the proposed model is that the values of the different circuit elements in the model are considered to be frequency dependent in nature and not constants. The frequency dependent value of each circuit element is mathematically represented using polynomial functions where the coefficients of the functions are determined via a least-square curve fitting approach. This frequency dependent attribute of the circuit element values ensures that the proposed model is very accurate at high frequencies without sacrificing the compactness of the model topology. The accuracy of the proposed model has been verified up to 50 GHz using experimentally measured Y-parameters of AlGaN/GaN MOS-HEMTs having a different gate dielectric and gate length.

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“…Such a complicated small-signal model will only increase the difficulty of parameter extraction without any effect on the accuracy. Second, there are many simplified approximations through the process of parameter extraction in the study of Tang et al (2006), which leads to inaccurate parameter estimates.…”

Section: Introductionmentioning

confidence: 99%

An analytic method for parameter extraction of InP HBTs small-signal model

Zhang

Liu

Wang

et al. 2021

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Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

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A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

Cited by 18 publications

References 13 publications

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

An analytic method for parameter extraction of InP HBTs small-signal model

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