The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Liao, Wen-Chia; Chen, Y. L.; Chen, C. H.; Chyi, Jen‐Inn; Hsin, Yue-Ming

doi:10.1063/1.4862669

Cited by 17 publications

(17 citation statements)

References 18 publications

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“…Nevertheless, an increased amount of crystal defects originating from threading dislocations, impurities, point defects and unintentional dopants in the buffer can potentially degrade both the static and dynamic performances of the device . Buffer trapping in GaN HEMTs has been reported and investigated by current transient and back‐gating measurements , but no extensive studies have been made on the buffer trapping in AlGaN/GaN SBDs.…”

Section: Introductionmentioning

confidence: 99%

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

Stoffels

Lenci

et al. 2016

Physica Status Solidi (a)

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We investigate the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes (SBDs) and the diodes with a gated edge termination (GET‐SBD) fabricated on unintentional doped (UID) and carbon‐doped AlGaN buffers. The off‐state characteristics of diodes fabricated on UID buffer are dominated by buffer leakage and buffer breakdown voltage (BV) at higher reverse voltage (VR larger than 300 V). An improvement in diode leakage and BV can be obtained by fabricating the GET‐SBDs on C‐doped buffers. A pronounced RON degradation of the AlGaN/GaN SBDs and GET‐SBDs on carbon‐doped buffers was observed by dynamic pulsed I−V characterization. This dynamic RON degradation causes a clear forward current reduction for the AlGaN/GaN GET‐SBDs. From combined off‐state stress and current transient measurements on AlGaN/GaN SBDs, the collapsed current is recoverable and the RON degradation is due to a temporary trapping mechanism occurring in the buffer. A distinct trap level of 0.57 eV from trap spectra has been extracted for the diode fabricated on C‐doped buffer, and the value was implemented in a TCAD simulator. The simulated results confirm a bulk trapping in the buffer layer for the SBD and show an additional trapping region in the GET‐SBD architecture.

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Section: Introductionmentioning

confidence: 99%

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

Stoffels

Lenci

et al. 2016

Physica Status Solidi (a)

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“…The root causes of these problems were attributed to the surface state [2], [3] and/or defects in the epitaxial layers [4], [5]. In addition, a few studies have proposed that the cause of R ON,dynamic is sensitivity to the applied electrical field [6] that can be suppressed using field plate structures [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Liao

Chyi

Hsin

2015

IEEE Trans. Electron Devices

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A measurement methodology involving high-voltage capacitance-voltage (C-V ) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced.Index Terms-AlGaN/GaN heterostructure field-effect transistors (HFETs), current collapse, transient capacitancevoltage (C-V ) measurement.

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“…The source of this problem is very complicated. It could be traps located at the surface and the epitaxial layers . Some researchers have proposed the insulator/semiconductor interface is the main issue .…”

Section: Introductionmentioning

confidence: 99%

Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C–V and dynamic on‐resistance measurements

Liao

Chyi

Hsin

2015

Physica Status Solidi (a)

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Stressed C-V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high-voltage off-state stress. The C-V measurement results also correlated with the degradation in dynamic on-resistance (R DS,on ) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic R DS,on degradation, the location with high electric field that determines the major degradation is determined. Finally, a new source field plate is proposed and demonstrated to improve the dynamic performance degradation.

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The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Cited by 17 publications

References 18 publications

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C–V and dynamic on‐resistance measurements

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