A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

Huang, Wei-Kuo; Liu, Yu-Chang; Hsin, Yue-Ming

doi:10.1109/lpt.2006.890055

Cited by 47 publications

(17 citation statements)

References 8 publications

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“…A few successful examples of CMOS APDs in 0.18μm technology have been reported (Iiyama et al, 2009;Huang et al, 2007;Kang et al, 2007), w i t h b a n d w i d t h f i g u r e s u p t o 2 . 6 G H z a n d g o o d d a r k c u r r e n t s , i n t h e n A r a n g e .…”

Section: Linear-mode Apdmentioning

confidence: 99%

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Avalanche Photodiodes in Submicron CMOS Technologies for High-Sensitivity Imaging

Betta¹,

Pancheri²,

Stoppa³

et al. 2011

Advances in Photodiodes

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Section: Linear-mode Apdmentioning

confidence: 99%

“…6 G H z a n d g o o d d a r k c u r r e n t s , i n t h e n A r a n g e . Nevertheless, the STI used for guard ring implementation can be inefficient for devices with deeper junctions, resulting in much higher dark currents (Huang et al, 2007).…”

Section: Linear-mode Apdmentioning

confidence: 99%

Avalanche Photodiodes in Submicron CMOS Technologies for High-Sensitivity Imaging

Betta¹,

Pancheri²,

Stoppa³

et al. 2011

Advances in Photodiodes

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“…In these applications, short wavelength vertical-cavity surface-emitting lasers (VCSELs) and silicon (Si) photodiodes (PDs) are used for low-cost system configuration. Si PDs fabricated by CMOS process are promising optical devices for easy integration with electronic circuits without any process modification [4][5][6], and avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have been developed for optical interconnection applications [7][8][9][10]. The bandwidth of the CMOS-APD, however, is limited by slow photo-generated carriers from the substrate because all the electrodes are arranged on the surface of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation

Napiah

Gyobu

Hishiki

et al. 2016

IEICE Trans. Electron.

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SUMMARYnMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18 µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84 µm, the detection area of 10 × 10 µm 2 , the PAD size for RF probing of 30 × 30 µm 2 , and with the guard ring structure. The maximum bandwidth of 8.4 GHz was achieved along with the gain-bandwidth product of 280 GHz.

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“…For short-distance optical communications such as optical access networks and optical interconnects, CMOS compatible photodetectors (CMOS-PDs) have been widely investigated to enable cost-effective implementation of large-capacity data transmission systems [1][2][3][4][5][6][7][8]. CMOS technology provides not only low-cost and highvolume fabrication but also a single chip solution for optical receivers with well developed CMOS circuits.…”

Section: Introductionmentioning

confidence: 99%

“…However, they still have problems of low responsivity and limited speed caused by a large area [5]. Recently, p+-p-n avalanche structure has been reported that provides high-speed and high-responsivity [6]. Based on this photodetector, a bandwidth enhancement technique was also devised by eliminating slow diffusion photocarriers [7].…”

Section: Introductionmentioning

confidence: 99%