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Three fast measuring methods, namely, "on-the-fly," fast direct threshold-voltage (V T ) determination, and fast draincurrent measurement near V T , are compared. Problems of the different methods are thoroughly discussed, and an analysis of systematic and statistical errors has been done. An example comparing the V T data extracted from the three methods is given. The results help us to understand the root causes for the observed differences in drift curves.Index Terms-Measuring delay, MOSFET, negative bias temperature instability (NBTI), pMOS, recovery.

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The NBTI recovery phenomenon leads to a fast reduction of the stress induced electrical device parameter degradation after end of stress. Delay times between device-stress and -characterization within NBTI-experiments affect the measurement values of degradation. This work discusses the impact of these delays on lifetime prediction for technology qualifications. For this reason we investigate delay times from 1µs up to 60s and stress times from 100ms up to 250 000s. A correlation between stress time, delay time induced recovery and error in predicted lifetime is elaborated for the first time. The influence of the recovery on single device stress experiments, on the voltage acceleration and finally on lifetime extrapolation is discussed. Furthermore we give simple guidelines for measurement requirements and essential stress times for accurate lifetime evaluations.

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