A model for multistep trap-assisted tunneling (TAT) with strong dependence on the trap concentration is introduced. The current density J as a function of the applied voltage V for A1/chemical vapor deposition-Al2O3∕SiO2∕p-Si structures has been measured and fitted for 12 orders of magnitude in a temperature range from T=42K to T=420K. A trap concentration of NT=1.3×1019∕cm3, an electron affinity of eχel=1.7eV, and an effective electron mass of mox=0.28m0 (m0 is the electron rest mass) for the Al2O3 are used. A single set of parameters fits the leakage currents of all samples with different Al2O3 thicknesses at all temperatures.
Oviasogie for their intense support in device characterization and application tests and M. Leutschacher for his valuable support in test development and technology testing of the wafer and the product.
AbstractThis paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power MOSFET devices. Also, the behavior of the body diode under hard commutation and its corresponding effects on the application are analyzed.
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