Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

On the thermal activation of negative bias temperature instability

“…Historically, both the trapping of holes in oxide defects and the creation of interface states have been suspected to be the cause of the degradation [1]. A logarithmic time dependence in the degradation of the threshold voltage is often considered the characteristic signature of a hole trapping contribution [2][3][4]. Conventionally, this hole trapping has been analyzed using elastic tunneling theory which predicts it to be temperatureindependent [2][3][4].…”

“…A logarithmic time dependence in the degradation of the threshold voltage is often considered the characteristic signature of a hole trapping contribution [2][3][4]. Conventionally, this hole trapping has been analyzed using elastic tunneling theory which predicts it to be temperatureindependent [2][3][4]. However, recent results clearly indicate that the hole trapping component contributing to NBTI is thermally activated, which is incompatible with elastic tunneling [5].…”

Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements

“…1͑a͒, we recognize that for these devices, any contributions to ⌬V T from hole trapping is negligible. Further, since activation energies for hole trapping, 9 H and H 2 diffusion, and N IT generation 2,3,6,13 ͑represented by E A͑HT͒ , E A͑H͒ , E A͑H 2 ͒ , E A͑IT͒ , respectively͒ are such that E A͑HT͒ Ӷ E A͑H͒ Ͻ E A͑H 2 ͒ ϳ E A͑IT͒ / n, models involving hole trapping 9 would be inconsistent with temperature-dependent data for these specific experiments.…”

“…Such t 0 error is not present either in classical I D -V G measurement ͑which is erroneous due to recovery issue, discussed earlier͒ or in the UFM, because in these cases ⌬V T ͑0͒ is obtained before the device is stressed. To observe the effect of time-zero delay in the OTFM results, we have used the experimental data from Reisinger et al 9 ͑at V G,stress = −2.2 V, 125°C͒, with a specified measurement delay of ϳ1 s ͑hence very small recovery͒ and t 0 ϳ 0 ͑similar to classical I D -V G ͒, as reference. Once correction due to t 0 is accounted for, we can explain n FIG.…”

Estudo do efeito NBTI em transistores MOS sem junções

“…Para segunda interface em depleção (9) onde Cox1 é a capacitância do óxido na primeira interface, VG1 é a tensão de porta da primeira interface e VTH1 é a tensão de limiar da primeira interface.…”