A Comparison of Fast Methods for Measuring NBTI Degradation

Reisinger, H.; Brunner, Ursin; Heinrigs, W.; Gustin, Wolfgang; Schlunder, C.

doi:10.1109/tdmr.2007.911385

Cited by 69 publications

(41 citation statements)

References 11 publications

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“…Similarly, during recovery, discharging occurs earlier than the measurement window [11,12]. We remark that reports exist claiming that the minimum time constants are in the order of 1µs [13,14]; however, this is not in agreement with other data that show degradation and recovery are already in full flight at 1µs [10][11][12].…”

Section: Theorycontrasting

confidence: 77%

“…A particularly intriguing observation is that neither the fastest nor slowest trap are normally observable during stress or recovery. During stress, even with a measurement resolution of 1µs, the degradation takes place outside the measurement range [10]. Similarly, during recovery, discharging occurs earlier than the measurement window [11,12].…”

Section: Theorymentioning

confidence: 99%

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On the thermal activation of negative bias temperature instability

Southwick

Knowlton

Kaczer

2009

2009 IEEE International Integrated Reliability Workshop Final Report

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The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO 2 devices from temperatures ranging from 300K down to 6K with a measurement window of ~12ms to 100s. Results indicate that classic NBTI degradation is observed down to ~200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the "classical" NBTI phenomenon.

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Section: Theorycontrasting

confidence: 77%

Section: Theorymentioning

confidence: 99%

On the thermal activation of negative bias temperature instability

Southwick

Knowlton

Kaczer

2009

2009 IEEE International Integrated Reliability Workshop Final Report

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“…• ΔV T estimation [12,16,23]: This one is a more challenging, because interpretation of ΔI D into ΔV T requires one to have adequate knowledge Δμ eff (ΔV T ) and Δm(ΔV T ), which is generally not available in OTF-I D measurements. Since we have calculated these quantities through separate measurements in the last section, we can develop an algorithm for ΔV T estimation [12] from ΔI D .…”

Section: δμ Eff (N It ) In δV T Estimation For Otf-i Dmentioning

confidence: 99%

“…threshold voltage degradation or ΔV T ) measurement; because it involves V T determination from I D -V G sweeps that requires sufficient time for stable measurements (except for the ultra-fast scheme [15], which is again limited due to noise issues [16]). This limitation of classical techniques motivated different groups to propose indirect methods of estimating ΔV T [17][18][19], in a way of achieving so called "recovery-free" NBTI measurement.…”

Section: Introductionmentioning

confidence: 99%

“…Mobility degradation due to N IT plays a significant role in such indirect ΔV T estimation. For example, although Δμ eff (N IT ) has negligible impact in the setup discussed in [19], when performed below threshold (though it requires corrections related to change in sub-threshold slope [12,20]), as well as in the setup discussed in [18] (which suffers from incorrect g m estimation [21]), extraction of ΔV T for on-the-fly I DLIN (OTF-I D ) technique, discussed in [17], can be completely wrong if Δμ eff (N IT ) is not correctly taken into account [11,12,16,22,23].…”

Section: Introductionmentioning

confidence: 99%

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Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Islam

Maheta

Das

et al. 2008

2008 IEEE International Reliability Physics Symposium

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Mobility degradation due to generation of interface traps (Δμ eff (N IT )) is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Δμ eff (N IT ) is relatively insignificant (compared to Δμ eff due to ionized impurity) and as such can be safely ignored for performance and reliability analysis. Here, we investigate the importance of considering Δμ eff (N IT ) for reliability analysis by analyzing a wide variety of plasma oxynitride PMOS devices using both parametric and physical mobility models. We find that contrary to popular belief this correction is fundamentally important for robust and uncorrupted estimates of the key reliability parameters like threshold-voltage shift, lifetime projection, voltage acceleration factor, etc. Therefore, in this paper, we develop a generalized algorithm for estimating Δμ eff (N IT ) for plasma oxynitride PMOS devices and systematically explore its implications for NBTI-specific reliability analysis.

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Electrically Stable Organic Permeable Base Transistors for Display Applications

Dollinger

Iseke

Guo

et al. 2019

Adv Elect Materials

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Unfortunately, high-resolution patterning techniques operating in the nanometer regime are costly and currently incompatible with the promise of low-cost flexible electronics. Hence, new device concepts need to be conceived which allow for an ultra-short channel length in conjunction with low fabrication costs. In this regard, vertical organic transistors with a channel length of ≈100 nm have generated significant interest in recent years, [4][5][6][7][8][9][10] as the vertical dimensions of an organic transistor can be easily controlled over the nanometer regime. The organic permeable base transistor (OPBT) is a truly vertical device with a semiconductor thickness in the order of 100 nm. Due to the extraordinarily short channel and a reduced influence of the contact resistance, [11] the OPBT can drive very large current densities above 1 kA cm −2[12] and reaches record-high transition frequencies of 40 MHz, [3] making it the fastest organic transistor to date. The transistor consists of a vertical stack of three electrodes separated by organic semiconductor layers. The outer electrodes constitute emitter and collector, while the central electrode is the base. It has native nano-sized holes, making it permeable for electrons. Current leakage into the base is prevented by a native oxide film around the electrode. In the on-state, a charge-accumulation channel at the oxide interface is formed, ensuring efficient charge transport through the base, while in the off-state the base potential hinders the charge conduction through the pinholes. Figure 1 shows a cross-sectional transmission electron microscopy (TEM) image of an OPBT with C 60 semiconductor layers and the ultra-thin permeable base electrode of aluminum.These advances enable a broad range of possible applications for OPBTs, including display driver circuits where high currents and fast switching are needed, [13] and radio-frequency identification (RFID) systems with MHz operation. [14,15] Realworld applications, however, require a number of other properties like integrateablity, low power consumption, and stability. OPBTs operate on low voltages, generally enabling facile integration into electronic circuits. The static power consumption of OPBTs was recently dramatically reduced by the introduction of a controlled base oxidation technique. [16] Stability, though, has not yet been studied for OPBTs and there is little research regarding the behavior of short-channel vertical organic transistors under continued electrical stress.Vertical organic permeable base transistors (OPBT) can drive large current densities of kA cm −2 and achieve record-high transition frequencies of up to 40 MHz. They are therefore an interesting candidate for numerous applications, including the use in active-matrix organic light emitting display (AMOLED) backplanes. However, the transistor characteristics are required to be stable against electrical stress. Here, the threshold voltage shifts under current-and voltage-stress conditions over various temperatures and illumination condi...

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A Comparison of Fast Methods for Measuring NBTI Degradation

Cited by 69 publications

References 11 publications

On the thermal activation of negative bias temperature instability

On the thermal activation of negative bias temperature instability

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Electrically Stable Organic Permeable Base Transistors for Display Applications

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