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The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate. In this work we analyze the single defects constituting NBTI. We introduce a new measurement technique stimulating a charging of these defects. By employing a statistical analysis of many stochastic stimulation processes of the same defect we are able to determine the electric field and the temperature dependence of these defects with great precision. Based on our experiments we present and verify a new, physics-based, quantitative model allowing a precise prediction of NBTI degradation and recovery. This model takes the stress history into account and also provides a prediction for degradation due to AC-NBTI and an understanding of the special features seen in conjunction with AC-NBTI.

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Three fast measuring methods, namely, "on-the-fly," fast direct threshold-voltage (V T ) determination, and fast draincurrent measurement near V T , are compared. Problems of the different methods are thoroughly discussed, and an analysis of systematic and statistical errors has been done. An example comparing the V T data extracted from the three methods is given. The results help us to understand the root causes for the observed differences in drift curves.Index Terms-Measuring delay, MOSFET, negative bias temperature instability (NBTI), pMOS, recovery.