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Three fast measuring methods, namely, "on-the-fly," fast direct threshold-voltage (V T ) determination, and fast draincurrent measurement near V T , are compared. Problems of the different methods are thoroughly discussed, and an analysis of systematic and statistical errors has been done. An example comparing the V T data extracted from the three methods is given. The results help us to understand the root causes for the observed differences in drift curves.Index Terms-Measuring delay, MOSFET, negative bias temperature instability (NBTI), pMOS, recovery.

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