A new smart V&lt;inf&gt;th&lt;/inf&gt;-extraction methodology considering recovery and mobility degradation due to NBTI

Schlunder, C.; Hoffmann, Marko; Vollertsen, R.‐P.; Schindler, G.; Heinrigs, W.; Gustin, Wolfgang; Reisinger, H.

doi:10.1109/irws.2007.4469211

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…Mobility degradation due to N IT plays a significant role in such indirect ΔV T estimation. For example, although Δμ eff (N IT ) has negligible impact in the setup discussed in [19], when performed below threshold (though it requires corrections related to change in sub-threshold slope [12,20]), as well as in the setup discussed in [18] (which suffers from incorrect g m estimation [21]), extraction of ΔV T for on-the-fly I DLIN (OTF-I D ) technique, discussed in [17], can be completely wrong if Δμ eff (N IT ) is not correctly taken into account [11,12,16,22,23].…”

Section: Introductionmentioning

confidence: 99%

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Islam

Maheta

Das

et al. 2008

2008 IEEE International Reliability Physics Symposium

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Mobility degradation due to generation of interface traps (Δμ eff (N IT )) is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Δμ eff (N IT ) is relatively insignificant (compared to Δμ eff due to ionized impurity) and as such can be safely ignored for performance and reliability analysis. Here, we investigate the importance of considering Δμ eff (N IT ) for reliability analysis by analyzing a wide variety of plasma oxynitride PMOS devices using both parametric and physical mobility models. We find that contrary to popular belief this correction is fundamentally important for robust and uncorrupted estimates of the key reliability parameters like threshold-voltage shift, lifetime projection, voltage acceleration factor, etc. Therefore, in this paper, we develop a generalized algorithm for estimating Δμ eff (N IT ) for plasma oxynitride PMOS devices and systematically explore its implications for NBTI-specific reliability analysis.

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Section: Introductionmentioning

confidence: 99%

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Islam

Maheta

Das

et al. 2008

2008 IEEE International Reliability Physics Symposium

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Negative bias temperature instability “multi-mode” compact model based on threshold voltage and mobility degradation

Varghese

Higgins

Dunn

et al. 2011

2011 International Reliability Physics Symposium

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In this paper we have developed a model to obtain drain current (ID) degradation at all transistor operating modes (linear, saturation and sub-threshold) during NBTI stress based on threshold voltage (VT) and mobility (μ) degradation. This model provides a compact way to comprehend NBTI induced drain current degradation for transistors subject to multiple operating modes (e.g., dynamic voltage scaling, active/standby modes).

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A new smart V<inf>th</inf>-extraction methodology considering recovery and mobility degradation due to NBTI

Cited by 2 publications

References 13 publications

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Negative bias temperature instability “multi-mode” compact model based on threshold voltage and mobility degradation

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A new smart V<inf>th</inf>-extraction methodology considering recovery and mobility degradation due to NBTI

Cited by 2 publications

References 13 publications

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Negative bias temperature instability &#x201C;multi-mode&#x201D; compact model based on threshold voltage and mobility degradation

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Negative bias temperature instability “multi-mode” compact model based on threshold voltage and mobility degradation