Abstract:In this paper we have developed a model to obtain drain current (ID) degradation at all transistor operating modes (linear, saturation and sub-threshold) during NBTI stress based on threshold voltage (VT) and mobility (μ) degradation. This model provides a compact way to comprehend NBTI induced drain current degradation for transistors subject to multiple operating modes (e.g., dynamic voltage scaling, active/standby modes).
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