In microelectronic industry, thin polymer layers are one of the more commonly used product constituents. Examples are glue layers, coatings, and dielectric layers. The thicknesses of these films vary from a few tens of nanometers to over a hundred micrometers. Since at film thicknesses below 100nm the thermal and mechanical properties start to deviate from those in the bulk, adequate characterization techniques are required. In the present paper we will report the results of an extensive literature search on the state-of-the-art of thermo-mechanical thin film characterization methods, such as the substrate curvature test, nanoindentation technique, bulge test, and impulsive stimulated thermal scattering.
Abstract-This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special 2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).
The thermo-mechanical integration of polymer films requires a precise knowledge of material properties. Nanoindentation is a widely used testing method for the determination of material properties of thin films such as Young’s modulus and the hardness. An important assumption in the analysis of the indentation is that the indented medium is a semi-infinite plane or half space, i.e., it has an “infinite thickness.” In nanoindentation the analyzed material is often a thin film that is deposited on a substrate. If the modulus ratio is small, (soft film on hard substrate) and the penetration depth is small too, then the Hertzian assumption does not hold. We investigate this situation with spherical and conical indentation. Measurement results are shown using spherical indentation on a visco-elastic thin polymer film and a full visco-elastic characterization is presented.
Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the lowtemperature back-wafer processing.
Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 Qlsq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.
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