Near-Ideal Implanted Shallow-Junction Diode Formation by Excimer Laser Annealing

Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions

“…It has been demonstrated that a clean and smooth surface is essential for having good electrical characteristics of the implanted junctions annealed by ELA, which requires soft landing during reactive-ion etching (RIE) steps and native oxide removal before implanting ions. 17 Various HF solutions can be used for the stripping of native oxide, the applicability of which will depend on the degree to which other layers are etched.…”

“…As specified in Table I, soft landing on the silicon surface results in smaller surface roughness, as good as that achieved by wet landing using HF solutions, but with the advantage of not significantly etching in the lateral direction. 17,18 Native oxide is removed in buffered HF (BHF) diluted with water in 1:7 ratio during a 15-s dip that is performed immediately prior to the implantation of As + ions. Aluminum is readily etched by HF solutions, but a dip in BHF(1:7) is preferable here because the Al etching saturates after approximately 50 nm, leaving a sufficiently thick Al/Si(1%) layer to function as a reflective mask.…”

“…This causes ablation of Al/Si(1%) at the edges that increases with laser energy density. 17 The premetallization HF dip-etch further etches the oxide layers, and this step can potentially expose the junction edges as indicated in Fig. 2c.…”

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

“…The contacts are implanted with 5 keV As and excimer laser annealed for dopant activation. In this manner it is possible to create low-ohmic contacts and near-ideal diodes essentially at "room-temperature" [30], [31]. This is because the laser pulse only melts the top few nm of the Si surface while the heat pulse that thereby is sent into the bulk is so short, in the s range at most, that the underlying layers are unaffected.…”

Application of laser annealing in the EU FP6 project D-DotFET

“…In the past, it has been demonstrated that excellent diode characteristics can be achieved by one-shot excimer laser annealing of low-energy implants [10][11][12]. An example is shown in Fig.…”