Reliability Issues Related to Laser-Annealed Implanted Back-Wafer Contacts in Bipolar Silicon-on-Glass Processes

Lorito, G.; Gonda, Viktor; Liu, S.; Scholtes, T.L.M.; Schellevis, H.; Nanver, L.K.

doi:10.1109/icmel.2006.1650969

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…Therefore, the bottom-gate diode is basically ideal in all cases and not effected by the implant and laser anneal at the surface. Similar behavior was also observed in our previous work [4] for an even lighter implant dose of 1015 cm2. In contrast, the BF2+ implants also report in that paper induced a very significant leakage current in the buried junction I-V characteristics.…”

Section: A Ideality Ofthe Bottom-gatejunctionsupporting

confidence: 90%

“…This has been demonstrated by a decrease in breakdown voltage in several different silicon-on-glass RF devices in which this type of laser-annealed junction was used to fabricate low-temperature low-ohmic contacts after substrate transfer [4] [5]. Similarly, in CMOS devices implantation induced channel dopant deactivation and gate dielectric degradation can also become issues.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

Liu

Gonda

Scholtes

et al. 2006

2006 International Workshop on Junction Technology

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A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.

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Section: A Ideality Ofthe Bottom-gatejunctionsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

Liu

Gonda

Scholtes

et al. 2006

2006 International Workshop on Junction Technology

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“…Besides their process simplicity, the Schottky contacts also have another advantage because the bipolar devices with im- planted collector contacts suffer from the effects of the residual implantation damage [40]. Depending on the distance to the implant and the type of implant, we observed enhanced junction leakage, increased impact ionization current, and reduced breakdown voltages.…”

Section: A Schottky Collector Contactingmentioning

confidence: 84%

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

Nanver

Schellevis

Scholtes

et al. 2009

IEEE J. Solid-State Circuits

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Abstract-This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special 2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).

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“…We observed increased non-ideal currents in high frequency silicon-on-glass (SoG) transistors [1], and reduced varactor breakdown voltage and increased series resistance in SoG varactors [2]. In both devices back wafer contacts were made after the wafer transfer, therefore the contact implants could only be activated by laser annealing due to the thermal limitations of the glass stack.…”

Section: Introductionmentioning

confidence: 95%

Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions

et al. 2006

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Ultrashallow junctions (USJ) were created by tilted 5 keV As + implantation to a dose of 3x10 15 cm -2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation here caused by the residual implantation defects. The extent and location of the residual damage is shown to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

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Reliability Issues Related to Laser-Annealed Implanted Back-Wafer Contacts in Bipolar Silicon-on-Glass Processes

Cited by 5 publications

References 9 publications

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions

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