This paper presents simulation study of Static characteristics for DMG (Dual Material Gate) Hetero-Dielectric (H-D) Tunnel FET. Here, two previously reported device architectures i.e. a DMG Single Dielectric TFET and SMG (Single Material Gate) Hetero-Dielectric TFET have been optimized by tuning the work functions and length and later on their combined impact on the proposed device architecture i.e. DMG Hetero-Dielectric Tunnel FET (DMG H-D TFET) is beenstudied. Electrical parameters such as threshold voltage, drain current I ds , Sub threshold Slope, I on to I off ratio, ambipolar current I amb have been studied. Some of the important analog parameters like transconductance g m , drain conductance g d , Output resistance R out , transconductance generation efficiency g m /I ds have also been studied using ATLAS Device Simulation Software.

No abstract

ABSTRACT:The use of phase-transfer catalysts, with water-insoluble initiators, for polymerization and graft copolymerization reactions was explored. The polymerization of a water-soluble vinyl monomer, acrylamide (AAm), and the graft copolymerization of AAm onto a water-insoluble polymer backbone, isotactic polypropylene (IPP), with a waterinsoluble initiator, benzoyl peroxide (BPO), and a phasetransfer catalyst, tetrabutyl ammonium bromide (Bu 4 N ϩ Br Ϫ ), were carried out in a water/xylene binary solvent system. The conversion percentage of AAm into polyacrylamide (PAAm) and the percentage of grafting of AAm onto IPP were determined as functions of various reaction parameters, such as the BPO, AAm, and phase-transfer-catalyst concentrations, the amounts of water and xylene in the water/xylene mixture, the time, and the temperature. The graft copolymer, IPP-g-PAAm, was characterized with IR spectroscopy and thermogravimetric analysis. By a comparison of the results of the phase-transfer-catalyzed graft copolymerization of AAm onto IPP and the preirradiation method, it was observed that the optimum reaction conditions were milder for the phase-transfer-catalyst-aided graft copolymerization. Milder reaction conditions, including the temperature, the time of reaction, and a moderate initiator (BPO), in comparison with high-energy ␥-rays, led to better quality products, and the reaction proceeded smoothly with high productivity.

An interstitial ectopic pregnancy is a rare and a dangerous form of an ectopic pregnancy. It presents late clinically and it is difficult to be imaged radiographically. We are presenting a case of an interstitial pregnancy which was a surprise intra operative finding.As Assisted Reproductive Technology (ART) procedures are becoming popular, the incidence of ectopic pregnancies is likely to increase. The clinicians should be well equipped to diagnose and to treat this unusual form of ectopic pregnancies at the earliest.

No abstract

The paper focuses on a comprehensive study of linearity and analog performance aspects of tunnel field effect transistor (TFET) device architectures such as dual material gate (DMG) TFET, hetero-dielectric (H-D) TFET, and dual material gate hetero-dielectric (DMG H-D) TFET. The parameters governing the device linearity and analog performance trends have been investigated in terms of transconductance (g m1 ), drain conductance (g d1 ), and second-and third-order derivatives of current, i.e., g m2 and g m3 . Further the linearity performance of DMG H-D TFET has been optimized by tuning the metal gate length and high-k dielectric length.

No abstract

No abstract