Linearity and Analog Performance Realization of Energy-Efficient TFET-Based Architectures: An Optimization for RFIC Design

Abstract

The paper focuses on a comprehensive study of linearity and analog performance aspects of tunnel field effect transistor (TFET) device architectures such as dual material gate (DMG) TFET, hetero-dielectric (H-D) TFET, and dual material gate hetero-dielectric (DMG H-D) TFET. The parameters governing the device linearity and analog performance trends have been investigated in terms of transconductance (g m1 ), drain conductance (g d1 ), and second-and third-order derivatives of current, i.e., g m2 and g m3 . Further the linearity performance of DMG H-D TFET has been optimized by tuning the metal gate length and high-k dielectric length.

Investigation of variation in temperature on steep subthreshold slope nanowire tunnel field effect transistor based biosensor

“…To evaluate linearity and distortion performance of the device [29,30], different parameters are calculated such as transconductance generation factor (TGF), second order voltage intercept point (VIP 2 ) [31], third order voltage intercept point (VIP 3 ) [31], current intercept point of third order (IIP 3 ), second and third order harmonic distortion (HD 2 and HD 3 ) and third order intermodulation distortion (IMD 3 ) [32]. The distortion and linear performance of the device depends upon the variables g m , g m2 , g m3, and I DS .…”

“…The VIP 2 is described as the second-order intercept point at which fundamental and second-order harmonics are equal at extrapolated gate bias [31]. Higher VIP 2 indicates better linearity.…”

“…k = 3 has higher values of VIP 3 and k = 25 has lower values of VIP 3 is plotted in figures 9(c) and (d). The HD 2 is used to measure linearity source in the output signal [31]. Lower the value of HD 2 , lesser the second order distortions.…”