Highly Sensitive Ga₂O₃-Face Tunnel Field Effect Phototransistor for Deep UV Detection

Ultrahigh Performance of β-Ga2O3-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

“…Among WBG semiconductor-based solar-blind ultraviolet detectors, AlGaN, ZnMgO, diamond, β-Ga 2 O 3, ZnGa 2 O 4 , Zn 2 GeO 4 , In 2 Ge 2 O 7 , and LaAlO 3 have attracted a lot of attention . It has been challenging to create an aluminum-based WBG semiconductor due to its high defect density and aluminum content.…”

“…6 The high surface area, high photoconductivity gain, and surfaceenhanced electron−hole separation efficiency of WBG semiconductor nanostructures such as nanorods and nanocolumns are factors that presumably make these nanostructures ideal for UV photodetectors. 7 Among WBG semiconductor-based solar-blind ultraviolet detectors, AlGaN, ZnMgO, diamond, β-Ga 2 O 3, 8 ZnGa 2 O 4 , Zn 2 GeO 4 , In 2 Ge 2 O 7 , 9 and LaAlO 3 10 have attracted a lot of attention. 11 It has been challenging to create an aluminum-based WBG semiconductor due to its high defect density and aluminum content.…”