No abstract

No abstract

No abstract

The films of ZnO–SnO2 system were deposited on glass substrates by simultaneous dc magnetron sputtering apparatus, in which ZnO and SnO2:Sb (Sb2O5 3 wt % doped) targets faced each other. The substrate temperatures were maintained at 150, 250, and 350 °C, respectively. As an experimental parameter, current ratio δ=IZn/(IZn+ISn), which corresponds to ZnO target current (IZn) divided by the sum of ZnO and SnO2:Sb target currents (IZn+ISn), was adopted. Amorphous transparent films appeared for 0.50⩽δ⩽0.73, which could be correlated to compositions as [Zn]/([Sn]+[Zn])=0.33–0.67 by x-ray fluorescent analysis. At [Zn]/([Sn]+[Zn])=1/2 (δ=0.62), 2/3 (δ=0.73) and all other ratios in as-deposited films, neither crystalline ZnSnO3 nor Zn2SnO4 was obtained. Minimum resistivity of 4–6×10−2 Ω cm was found at δ=0.50, whose composition was approximately SnO2⋅ZnSnO3. Resistivity increased linearly with an increase of the current ratio, until the composition reached Zn2SnO4. The amorphous phase showed a constant Hall mobility of ∼10 cm2/V s and a linear decrease in carrier concentration with increasing Zn content.

No abstract

No abstract

No abstract

No abstract