Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets

Tominaga, Kikuo; Takao, Toru; Fukushima, A.; Moriga, Toshihiro; Nakabayashi, Ichiro

doi:10.1016/s0042-207x(02)00123-9

Cited by 78 publications

(52 citation statements)

References 6 publications

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“…Etching characteristics are improved because the etching speed does not depend on the crystal orientation in the amorphous phase [9,10]. For film bulk acoustic device applications, it is necessary for TC films to be prepared with some specific characteristics.…”

Section: Introductionmentioning

confidence: 99%

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

et al. 2009

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Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. The high roughness of the polymer substrate affects the properties of indium tin oxide films. The transmittance, the resistivity, and the optical band gap decrease with increasing the film thickness while the refractive index increases. The present indium tin oxide films are amorphous, transparent and have relatively low resistivity. These properties are suitable as transparent electrode for organic light-emitting diodes, touch screens, and in piezoelectric applications.

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Section: Introductionmentioning

confidence: 99%

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

et al. 2009

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“…In 2002 Tominaga et al 17) reported the influence of Al and Sn impurities in the structural and electrical properties of amorphous IZO films. According to their report, addition of Al or Sn impurities to a-IZO film extends the level of Zn content where the amorphous structure appears and leads to a low-resistivity amorphous film.…”

Section: Discussionmentioning

confidence: 99%

Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films

Chen

Kim

et al. 2009

J. Ceram. Soc. Japan

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InAlZnO films were deposited on glass substrates by sputtering InZnO (In2O3-10 wt% ZnO) and AlZnO (3 wt% Al2O3-97 wt% ZnO) targets simultaneously at room temperature using a DC and AC magnetron cosputtering system. The concentration of Al in the film was varied by using different DC powers for sputtering the InZnO target with the AC power for sputtering the AlZnO target fixed. It has been found that the total concentration of Al and In in the InAlZnO films tends to be maintained constant below a certain Al doping concentration. It has been found that the electrical resistivity of the InZnO film can be decreased by doping Al the concentration of which is higher than a certain lower limit. The cause of the decrease in the resistivity of InZnO by doping 5.2 mol% Al are discussed. The optical transmittance has been found to be also enhanced in all the wavelength range except the range from 410-490 nm by doping 5.2 mol% Al.

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“…Also various biological, chemical and gas sensors [9] are based on ZnO thin film. Thin films of ZnNiO can be prepared by various techniques; among them are sputtering [10]- [11], metal-organic chemical vapour deposition (MOCVD) [12], pulse laser deposition (PLD) [13], spray pyrolysis [14] and sol-gel method [15]- [19] have studied structural and optical properties of nano crystalline ZnNiO thin films derived from clear emulation of nano-crystallite Ni doped ZnO nano crystals. Compare to the other processes, the sol-gel process has the advantages of control ability of chemical compositions due to its simplicity in processing and cost effective.…”

Section: Intrductionmentioning

confidence: 99%

Preparation and Characterisation of Nickel Doped Zinc Oxide Thin Films in comparison to ZnO Thin Films by Sol-Gel Method

Das¹

2018

IJRASET

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Compare to the other processes, the sol-gel process has the advantages of control ability of chemical compositions due to its simplicity in processing and cost effective. Properties of ZnNiO thin films show dependence on the technique used apart from doping to increase the functionality of Ni doped ZnO thin film, the effect of preparation conditions on the properties have to be considered for its effective technological applications. In the present work sol-gel spin coating process is employed for film preparation. Zinc acetate dihydrate and nickel acetate tetra hydrate were used as the precursor material and dopant, respectively. The effects of annealing on the structural and optical properties of Ni doped ZnO thin films in comparison to ZnO thin films at 600 o C were studied. Double beam spectrophotometer was used for optical properties as well as XRD and HR-TEM were used for structural properties of Ni doped ZnO. II. EXPERIMENTAL

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Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets

Cited by 78 publications

References 6 publications

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films

Preparation and Characterisation of Nickel Doped Zinc Oxide Thin Films in comparison to ZnO Thin Films by Sol-Gel Method

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