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Crystallization process of the homologous compounds Zn k In 2 O k+3 from the coprecipitants was examined by XAFS spectroscopy and X-ray diffractometry. Interesting crystallization behavior could be observed. Though zinc oxide already crystallized as the wurtzite-type ZnO at 573K, indium oxide remained amorphous. Subsequently bixbyite-type In 2 O 3 appeared at 873K for k=5 and 7 and at below 773K for the other k-members, respectively. The In-O distance in the amorphous In 2 O 3 was a little shorted than that in the bixbyite-type In 2 O 3 by 0.06-7Å. The distance remained constant but abruptly increased to that observed in the bixbyitetype In 2 O 3 in accordance with the progress of crystallization. Then the distance gradually decreased and converged to ca. 2.12Å at the temperature range of 1173-1373K, due to the reaction between In 2 O 3 and ZnO to form the homologous compound.

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Structural and transparent conducting properties of amorphous Zn-In-O films deposited by simultaneous sputtering of ZnO and In 2 O 3 targets facing each other were reviewed. Post-annealing under the reductive gas flow was effective on improving unevenness of the amorphous films.