Transparent conducting amorphous Zn–Sn–O films deposited by simultaneous dc sputtering

Abstract

The films of ZnO–SnO2 system were deposited on glass substrates by simultaneous dc magnetron sputtering apparatus, in which ZnO and SnO2:Sb (Sb2O5 3 wt % doped) targets faced each other. The substrate temperatures were maintained at 150, 250, and 350 °C, respectively. As an experimental parameter, current ratio δ=IZn/(IZn+ISn), which corresponds to ZnO target current (IZn) divided by the sum of ZnO and SnO2:Sb target currents (IZn+ISn), was adopted. Amorphous transparent films appeared for 0.50⩽δ⩽0.73, which could be correlated to compositions as [Zn]/([Sn]+[Zn])=0.33–0.67 by x-ray fluorescent analysis. At [Zn]/([Sn]+[Zn])=1/2 (δ=0.62), 2/3 (δ=0.73) and all other ratios in as-deposited films, neither crystalline ZnSnO3 nor Zn2SnO4 was obtained. Minimum resistivity of 4–6×10−2 Ω cm was found at δ=0.50, whose composition was approximately SnO2⋅ZnSnO3. Resistivity increased linearly with an increase of the current ratio, until the composition reached Zn2SnO4. The amorphous phase showed a constant Hall mobility of ∼10 cm2/V s and a linear decrease in carrier concentration with increasing Zn content.

Improvement of the thermal and chemical stability of Al doped ZnO films

“…1(a) and (b). The XRD pattern of as-deposited ZTO film exhibited only broad peak at 2θ -34 • characteristic of amorphous zinc tin oxide [8,9]. The resistivity of the as-deposited AZO film was 2.9 × 10 −4 cm.…”

Room temperature ferromagnetism in nanocrystalline Ni-doped ZnO synthesized by co-precipitation

“…It is used in the production of many optoelectronic devices, like solar cells or flat panel displays, etc [1]. Usually ZnO is used doped with different types of metallic ions, like Sn, Ga, In, Sn, Al, Sc, and Y, in order to improve its TCO properties [2][3][4][5]. Doping of ZnO with magnetic ions such as Fe, Co, Ni introduces magnetic properties forming dilute magnetic semiconductors (DMSs), which are interesting materials due to their possible applications in the field of spintronics [6].…”

Effects of introduction of argon on structural and transparent conducting properties of ZnO–In2O3 thin films prepared by pulsed laser deposition

“…At x=0.71, where the observed phase is changed from homologous to amorphous by the introduction of argon gas, the carrier concentration was abruptly enhanced, but the Hall mobility abruptly reduced. The carrier enhancement is attributed to the easy introduction of oxygen vacancies into bdisorderedQ amorphous films [2,18,20]. However, the increased carrier concentration and decreased Hall mobility counteract each other so that resistivity remained unchanged before and after the argon introduction.…”