Effects of introduction of argon on structural and transparent conducting properties of ZnO–In2O3 thin films prepared by pulsed laser deposition

Moriga, Toshihiro; Mikawa, Michio; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei‐ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo; Metson, James B.

doi:10.1016/j.tsf.2004.11.241

Cited by 8 publications

(4 citation statements)

References 17 publications

(29 reference statements)

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“…They found that the threshold δ value at which In 2 O 3 -ZnO films change from amorphous to homologous phase is nearly constant at δ = 0.67 for Al 2 O 3 = 0, 2 and 3 wt.%. Moriga et al [15,16] have found that: (i) with the increase of the substrate temperature to 300 • C the amorphous structure of the films obtained in the region 0.20 < δ < 0.67 disappeared and crystalline phases were obtained [15]; and (ii) the compositional range where amorphous films formed was widened by the introduction of argon during the preparation of ZnO-In 2 O 3 films by pulsed laser deposition [16]. In our case and by using our preparation method, at higher In content ZnO films remain amorphous even at the highest (500 • C) annealing temperatures.…”

Section: Structural Examinationmentioning

confidence: 99%

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

Mohamed

Ali

Hussein

et al. 2005

Eur. Phys. J. Appl. Phys.

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The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In2O3 films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 • C. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 • C. For each composition the refractive index has no monotonic variation upon increasing annealing temperature. PACS. 61.10.-i X-ray diffraction and scattering-78.20.-e Optical properties of bulk materials and thin films-68.55.-a Thin film structure and morphology-72.20.-i Conductivity phenomena in semiconductors and insulators

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Section: Structural Examinationmentioning

confidence: 99%

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

Mohamed

Ali

Hussein

et al. 2005

Eur. Phys. J. Appl. Phys.

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“…The minimum resistivity (ρ~ 1.5×10 -3 Ω cm) and maximum carrier concentration (n~3.0×10 20 cm -3 ) were obtained for the film whose atomic ratio was 0.5, prepared by sol-gel method [96]. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In 2 O 3 thin films were examined by T. Moriga et al [97]. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration.…”

Section: /Tmentioning

confidence: 99%

Review on Indium Zinc Oxide Films: Material Properties and Preparation Techniques

Nagarani¹,

Jayachandran²,

Sanjeeviraja

2011

MSF

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Thin films have become important for basic studies in physics and in many other fields. The immense interest in basic properties of thin films is due to considerable variations in their properties compared to those of the bulk material. Studies of the optical, electrical and magnetic properties, investigations of structural disorder and phase transition and of various surface phenomena are very much interest in research areas. The results obtained by research on basic studies are useful for the technical application of thin films. Thin films have greater deviations in their behavior corresponding to their original bulk materials. Because of small thickness certain physical features are observed such as optical interference, electronic tunneling through an insulating layer, high resistivity, low temperature coefficient of resistance, increase in optical magnetic fields and optical temperatures of superconductors. Material properties of indium zinc oxide thin films and all the techniques used to deposit thin films are summarized with an elaborative account along with our results.

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“…However, Superior characteristics to improve the electrical conductivity of ITO films were chosen instead of the IZO. Recently, indium-zinc oxide [1][2][3][4][5][6][7] and numerous studies have shown. In particular, Moriga et al [1] revealed nine homologous compounds of In 2 O 3 (ZnO) k composition (k = 3, 4, 5, 6, 7, 9, 11, 13 and 15).…”

Section: Introductionmentioning

confidence: 99%

“…Usually, IZO thin films were prepared by a pulsed laser deposition (PLD) [3][4][5] or magnetron sputtering method [6,7]. In these ways, highly c-axis oriented and well crystallized thin films were obtained.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method

Lee¹,

Lee²,

Park³

2012

Journal of the Korean Crystal Growth and Crystal Technology

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Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [Zn(CH 3 COO) 2 • 2H 2 O] and indium acetate [In(CH 3 COO) 3 ] were used as starting precursors, and 2methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to 1000 o C, the thin film crystallizes into polycrystalline In 2 O 3 (ZnO). The lowest electrical resistivity was obtained at an annealing temperature of 700 o C as 2 Ω • cm. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

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Effects of introduction of argon on structural and transparent conducting properties of ZnO–In2O3 thin films prepared by pulsed laser deposition

Cited by 8 publications

References 17 publications

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

Review on Indium Zinc Oxide Films: Material Properties and Preparation Techniques

Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method

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