ZnO–SnO2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO2 targets

Hayashi, Yukako; Kondo, Kumiko; Murai, Kei‐ichiro; Moriga, Toshihiro; Nakabayashi, Ichiro; Fukumoto, H.; Tominaga, Kikuo

doi:10.1016/j.vacuum.2004.01.033

Cited by 64 publications

(39 citation statements)

References 7 publications

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“…1(a) and (b). The XRD pattern of as-deposited ZTO film exhibited only broad peak at 2θ -34 • characteristic of amorphous zinc tin oxide [8,9]. The resistivity of the as-deposited AZO film was 2.9 × 10 −4 cm.…”

Section: Resultsmentioning

confidence: 99%

Improvement of the thermal and chemical stability of Al doped ZnO films

Kim

et al. 2006

J Electroceram

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To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300 • C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO 2 targets. Amorphous ZTO films had resistivity in the range from 10 −2 to 10 −3 cm and were stable up to temperature of 400 • C. Heat treatments of bare AZO films in the atmosphere at 400 • C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400 • C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.

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Section: Resultsmentioning

confidence: 99%

Improvement of the thermal and chemical stability of Al doped ZnO films

Kim

et al. 2006

J Electroceram

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“…In the current state of the art there are some scientific publications devoted to preparation and characterization of TOS materials, which concern mainly ZnO, ITO and SnO 2 oxides [6][7][8]. There are also some reports about manufacturing of TOS thin films based on titanium dioxide [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor

Mazur¹,

Domaradzki²,

Wojcieszak³

2014

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. In this paper, the influence of vanadium doping on optical and electrical properties of titanium dioxide thin films has been discussed. The (Ti-V)Ox thin films was deposited on silicon and Corning glass substrates using high energy reactive magnetron sputtering process. Measurements performed with the aid of x-ray diffraction revealed, that deposited thin film was composed of nanocrystalline mixture of TiO2-anatase, V2O3 and β-V2O5 phases. The amount of vanadium in the thin film, estimated on the basis of energy dispersive spectroscopy measurement, was equal to 3 at. %. Optical properties were evaluated based on transmission and reflection measurements. (Ti-V)Ox thin film was well transparent and the absorption edge was shifted by only 11 nm towards longer wavelengths in comparison to undoped TiO2. Electrical measurements revealed, that investigated thin film was transparent oxide semiconductors with n-type electrical conduction and resistivity of about 2.7 · 10 5 Ωcm at room temperature. Additionally, measured I-V characteristics of TOS-Si heterostructure were nonlinear and asymmetrical.

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“…Recently, however, its high cost due to the scarcity (Clarke number is 10 −5 ) and the toxics of indium oxides have been strongly pointed out so that alternative transparent and electro conductive materials have been actively studied over the last two decades [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Novel Rare-Elements Free Transparent Conductor of Mg(OH)2-C Compounds

Honjo

Chiba

Kuji

2009

e-J. Surf. Sci. Nanotechnol.

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We are now reporting that Mg-C-O-H compound which has a Mg hydroxide symmetry, Mg(OH)2, whose mineral name is Brucite, is an excellent electrical conductor with high optical transparency. We believe that this new material is the first non-oxide type transparent conductor. The compound has approximately 90% of optical transmission and conductivity of approximately 10 −2 Ωcm with 2.4 µm of thickness. The compound was fabricated through two consecutive processes. First Mg-C films were prepared by magnetron sputtering. Then, post-treatment was done to make the Mg-C react with moisture in the air. These processes yielded Mg(OH)2-C. In this paper, the fabrication processes and optical and electrical conductive properties of the compound will be reported and possible origin of the excellent properties will be discussed.

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ZnO–SnO2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO2 targets

Cited by 64 publications

References 7 publications

Improvement of the thermal and chemical stability of Al doped ZnO films

Improvement of the thermal and chemical stability of Al doped ZnO films

Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor

Novel Rare-Elements Free Transparent Conductor of Mg(OH)2-C Compounds

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