2000
DOI: 10.1006/jssc.2000.8919
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Structures and Physical Properties of Films Deposited by Simultaneous DC Sputtering of ZnO and In2O3 or ITO Targets

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Cited by 65 publications
(61 citation statements)
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References 26 publications
(17 reference statements)
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“…The IZOCMB1 film presents a lower resistivity (2.3 × 10 −3 Ωcm) for 28.8-29.5 at.% In content (Figure 14a), and IZOCMB2 film has a lower resistivity (8.6 × 10 −4 Ωcm) in 44-49 at.% of In content region (Figure 14b). The literature reported similar data for the minimum resistivity obtained for samples with similar In atomic concentration deposited by magnetron sputtering [75,76].…”
Section: Nanoscaled Films and Layers 62supporting
confidence: 64%
“…The IZOCMB1 film presents a lower resistivity (2.3 × 10 −3 Ωcm) for 28.8-29.5 at.% In content (Figure 14a), and IZOCMB2 film has a lower resistivity (8.6 × 10 −4 Ωcm) in 44-49 at.% of In content region (Figure 14b). The literature reported similar data for the minimum resistivity obtained for samples with similar In atomic concentration deposited by magnetron sputtering [75,76].…”
Section: Nanoscaled Films and Layers 62supporting
confidence: 64%
“…However, the exact composition at which IZO transforms from crystalline to amorphous depends in detail on the deposition conditions and hence may also vary from one deposition system to another. [22,23] To further elucidate the structural properties of the IZO thin films as a function of composition, both the 2u full width at half maximum (FWHM) and the lattice plane spacing for the IZO films as determined from the XRD spectra shown in Figure 1 are shown in Figure 2. From the FWHM data, the transition from crystalline to amorphous material is clearly observed (as shown in Figure 2a).…”
Section: Resultsmentioning
confidence: 99%
“…This maximum occurs in the amorphous region and a broad range of highly conducting material is found throughout the amorphous composition range of 55-84 cat% In, similar to that previously reported for as-deposited amorphous IZO. [12,22,23,26,27] Note that the conductivity data in Figure 3 do not overlap perfectly at the transitions from one IZO library to another. For example, this is particularly noticeable at $20 cat% indium where the transition from library L1 (!)…”
Section: Resultsmentioning
confidence: 99%
“…This explains the anomaly of why the apparent optical gap of In 2 O 3 (ca. 3.6 eV) [7] reduces to below 3.2 eV on the addition of ZnO to form IZO [32,33,37].…”
Section: Natural Band Offsetsmentioning
confidence: 99%
“…The possibility of discovering alternative n-type TCO compositions with superior material properties has led to the investigation of ternary and quaternary systems, with In 2 O 3 (ZnO) n (IZO) being one particular focus of attention [32][33][34][35][36][37]. These studies have highlighted the improved chemical and thermal stability of IZO compared to ITO, making it more desirable for commercial application.…”
Section: Introductionmentioning
confidence: 99%