Articles you may be interested inRole of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metaloxide-semiconductor capacitor

The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current–voltage (I–V) characteristics show an excellent rectification ratio (ION/IOFF = 105) at a bias voltage of ±1 V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I–V (0.62 eV) and high frequency capacitance–voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35–2.5 μm under different reverse bias conditions (0.0–1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.

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In this article we present a three-dimensional loop Yagi-Uda array for efficient, polarization independent and directional absorption of THz radiation over a narrow frequency range (f0 = 0.657 THz & Q factor = 7.5). Unit cell of the array consists of three vertically stacked gold micro rings separated from each other by 30 µm thick SU-8 layers. The proposed array also exhibits a filtering response in its transmittance spectrum. The characteristics are explained by plasmon hybridization method. The transmission, reflection and absorption spectra of the structure are measured and they show a good agreement with corresponding simulated results.

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