The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current–voltage (I–V) characteristics show an excellent rectification ratio (ION/IOFF = 105) at a bias voltage of ±1 V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I–V (0.62 eV) and high frequency capacitance–voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35–2.5 μm under different reverse bias conditions (0.0–1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.
Based on the variational technique, the binding energy associated with the ground donor state in the presence of conduction band nonparabolicity, polarization charge, and self-energy is estimated for a finite-barrier quantum dot, with a hydrogenic impurity located at its center. The overall effect of the conduction band nonparabolicity, polarization charge, and self-energy is found to enhance the ground state binding energy, their influences being most prominent in small dots with high barriers.
Energy levels of traps in silicon nitride are determined using a modified trap spectroscopy method, based on filling of traps using electrical stress followed by optical detrapping, in a metal–silicon nitride–silicon structure. Indium tin oxide with 84% transmittance is used as transparent electrode. Photon energy dependent shift in the flat band voltage is used to estimate type and energetic position of the traps. Here, we report detection of two prominent hole trap levels at 0.5 and 1.1 eV above the valance band edge. The study suggests that phonons hardly participate in the detrapping process of holes in Si3N4.
In this study indium tin oxide (ITO) thin films have been deposited by RF sputtering technique on quartz substrate. In all cases, the substrate was heated during deposition. Thin film deposited under various process conditions, shows characteristic XRD reflection corresponding to the (222) crystal orientation. Transmittance of the film has been measured for the wavelength range from 190 to 3300 nm. Average transmittance of 84.4%, 90.2% and 85.3% for wavelengths up to 800 nm, 2500 nm and 3300 nm respectively has been obtained. The resistivity in this case is found to be as low as ~10 × 10 -4 Ω-cm. Our study is focused on controlling the resistivity of the deposited film, without compromising transmittance in the near infra red (NIR) region of the spectrum. Substrate heating during deposition is found to result in films with grains which are oriented in (222) direction predominantly. Moreover, the average grain size is increased with subsequent annealing. It has been observed that though the transmittance for the samples doesn't vary substantially upon annealing the resistivity decreases by several factors.
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