Effect of non-uniformly doped surface layer on the barrier height of a Schottky contact

Roy, Sandipta; Daw, A. N.

doi:10.1016/0038-1101(80)90060-x

Cited by 19 publications

(5 citation statements)

References 8 publications

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“…References (10) and (23) have also considered the effects associated with acceptor doping profiles with Gaussian, exponential, or complementary error function form. For a given quantity of ionized acceptor charge, the relative magnitude of the barrier enhancement A4~B decreases in the order planar > Gaussian > erfc > exponential.…”

Section: Discussionmentioning

confidence: 99%

“…Theoretical background.--Modified barrier heights due to shallow surface doping have been examined theoretically in considerable detail (9,(18)(19)(20)(21)(22)(23)(24)(25)(26) since the early 1970's. Various levels of approximation of carrier effects have been considered, including (i) the depletion approximation (9,(19)(20)(21)(22)(23)(24)(25), (ii) a limited inversion approximation that accounted for minority free-carriers outside the p* region (26), and (iii) numerical calculations, including both electron and hole free-carriers throughout the device structure (present work).…”

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz

Gualtieri

Bonner

1986

J. Electrochem. Soc.

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An in vacuo, shallow Zn diffusion technique has been examined for increasing the effective Schottky barrier height of Ag and Au on (100) n-InP. For a single diffusion cycle, a barrier enhancement of -0.1 eV was achieved by forming a shallow (-400]t) p § layer with an acceptor-to-bulk-donor ratio NA/ND ~ 10. A multiple diffusion sequence yielded barrier enhancements of -0.2 eV for a p* layer width of -800]~ and NA/ND ~ 6-8. Numerical evaluation of Poisson's equation, including both electron and hole free-carrier densities, provides estimates of where the depletion approximation fails as a function of doping and width of the surface p* layer.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-26 to IP

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz

Gualtieri

Bonner

1986

J. Electrochem. Soc.

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“…The effect is evidently not an intrinsic property of ideal Schottky barriers but an artefact. Various attemps have been made to explain such temperature dependence in termes of particular distribution of interface states and a non‐uniformly doped surface layers .The simplest form of barrier lowering is that due to image force. Following the image force model, the variation of barrier height Δϕ B is proportional to the reverse bias ( V R ) 1/4 , and consequently a plot of ln( I ) versus ( V R ) 1/4 should give a straight line.…”

Section: Resultsmentioning

confidence: 99%

Investigations of the electrical conduction mechanisms of polyaniline‐DBSA/poly(acrylonitrile‐butadiene styrene) blends

Campos

Miziara

Cristovan

et al. 2014

J of Applied Polymer Sci

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The electrical properties of Al/PANI-DBSA/ABS/Au blend with PANI (5%) w/w have been investigated by using of current-voltage (I-V) measurements, in a temperature range of 100-313 K. The analysis of I-V characteristics in the forward direction was based on thermionic emission mechanism for applied electrical field till $3 3 10 2 V/cm. The thickness dependence of the current-voltage relationship, clearly demonstrates that the electrical current for larger fields is space charge limited current (SCLC). Temperature dependences of the ideality factor, barrier height, and series resistance have been calculated. The mobility of carriers which is temperature dependent was calculated using the trap free SCLC as 1.53 3 10 24 cm 2 V 21 s 21 at room temperature. V C 2014Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40688.

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“…Although Sehottky barriers on most covalent semiconductors are relatively insensitive to changes in the metal workfunction, it has been known since the early 1970's that surface-doped barriers in either a metal-p+-n (MPN) or metalm*-p (MNP) configuration can be employed to enhance barrier heights. A number of theoretical papers have appeared treating both narrow (1)(2)(3)(4)(5)(6) and extended (7)(8)(9) surface-doped regions. With the exception of Ref.…”

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confidence: 99%