Schottky Barrier Height Enhancement on M‐P+‐N Structures Including Free‐Carriers

Schwartz, G. P.; Gualtieri, G. J.

doi:10.1149/1.2108848

Cited by 29 publications

(4 citation statements)

References 8 publications

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“…The calculations were carried out using N D = 1 × 10 18 cm −3 and a value of V Sn0 = 0.78 eV for the surface barrier of unpassivated semiconductor as determined by photoemission experiments [13]. The surface barrier V S and the depletion layer depth δ decrease after passivation.…”

Section: Resultsmentioning

confidence: 99%

Sulphide passivation of GaAs: the role of the sulphur chemical activity

Бессолов¹,

Lebedev²,

Binh³

et al. 1998

Semicond. Sci. Technol.

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The passivation of n-GaAs in different sulphur containing solutions in which sulphur chemical activity was varied, i.e. solutions of sodium and ammonium sulphides in water and alcohols, as well as a solution of sulphur monochloride in carbon tetrachloride, was studied by photoluminescence and Raman spectroscopy. The increase of the sulphur chemical activity in the passivating solution results in an increase of the photoluminescence intensity and in a decrease of the surface barrier of the passivated semiconductor.

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Section: Resultsmentioning

confidence: 99%

Sulphide passivation of GaAs: the role of the sulphur chemical activity

Бессолов¹,

Lebedev²,

Binh³

et al. 1998

Semicond. Sci. Technol.

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“…20 Thus, the silicide is in contact with the junction depletion region, rather than with the low-doped substrate, leading to a so-called Shannon contact. 21 These contacts result in higher barriers equal to even 0.8-0.9 E g , 22 and e.g., 0.86 eV has been reported for CoSi 2 /p-Si. 23 The leakage current densities for Schottky junctions are much larger than in a standard p-n junction, 21 implying that even a very small Schottky contact impacts the leakage, especially in the case of very high quality p-n junctions.…”

Section: Leakage Current Componentsmentioning

confidence: 76%

Local Electric Fields in Silicided Shallow Junctions

Czerwiński¹,

Simoen²,

Poyai³

et al. 2004

J. Electrochem. Soc.

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The local electric field in a p-n junction crucially impacts the reverse ͑leakage͒ current that determines basic parameters of semiconductor devices and integrated circuits. The field importance and magnitude are investigated by a method based on the analysis of the leakage-current activation-energy (E a ) and its dependence on junction bias (V R ), especially on experimental occurrence of the dE a /dV R minimum. It is illustrated for silicided shallow junctions, which exhibit together with the generation current also a local Schottky effect due to small-area silicide penetrations. The method may also be used for different materials and current origins.One of the concerns in various technologies is the p-n junction reverse ͑leakage͒ current (I R ). Because of a drain-junction leakage current, I R strongly impacts the off-state leakage and power consumption in scaled ultralarge scale integrated ͑ULSI͒ technologies and especially the retention time of dynamic random access memories ͑DRAMs͒, 1 and determines the noise and overall quality of complementary metal oxide semiconductor ͑CMOS͒ image sensors. 2 For that purpose, a good insight in the leakage current mechanisms is essential. In scaled technologies, the peripheral or surface component, where the depletion region reaches the Si-SiO 2 interface is the dominant component. [1][2][3][4] The increase of the doping concentration in the substrate regions is another scaling trend, which at the same time enhances the maximum electric field (F d ) due to ionized impurities. This favors field-enhanced carrier generation mechanisms, like the Poole-Frenkel ͑P-F͒ effect, trap-assisted tunneling ͑TAT͒, band-toband tunneling ͑BBT͒, and impact ionization, which should be accounted for when analyzing or modeling the junction leakage current. [3][4][5][6][7][8][9] The maximum field is usually attributed to F d ϭ 2(V bi ϩ V R )/W d ϳ (V bi ϩ V R ) 1/2 for a planar junction, where V bi is the built-in potential and W d is the depletion width that depends on the reverse bias V R . However, when considering the peripheral leakage current, due to junction edges and corners, which mostly determines the leakage current of state-of-the-art small-size junctions, 3,4 one should rather use expressions for a curved junction. 10 These expressions, oppositely to the case of a planar junction, yield in good approximation a linear dependence between F d and V R ϩ V bi .However, it is generally impossible to explain the leakage current by the identification of the maximum electric field F d due to impurity ionization only. 11 Especially, when extended defects are present, the local ͑real͒ field (F LOC ) experienced in their vicinity by generation-recombination ͑G-R͒ centers is significantly higher, 8 whereby F LOC ϭ F d . The field enhancement factor is especially high for needlelike conductive protrusions in the junction. 12 For samples with the same number and type of G-R centers, a higher leakage current occurs at larger F LOC . It explains the large efforts for manufacturing devices with a l...

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“…The diode structure of the CoSi 2 /thin p-Si/n-Si substrate may be considered as a Shannon contact, 8 because the Shannon contact is a Schottky diode which has a thin p-type layer between the metallic contact and n-type Si. 9,10 The p layer leads to an increase in the effective barrier height of the Schottky diode, followed by decrease in reverse leakage current of the Schottky diode. This enhancement of the barrier height is determined by the concentration and depth of the boron present under the silicide.…”

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confidence: 99%

Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

Kim

Kwak

Baik

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The effect of formation temperature of epitaxial CoSi2 in the Co/Ti/Si system on electrical characteristics of a p+n junction diode has been investigated. When the silicide formation temperature was 800 °C, a very low reverse leakage current density of 11 nA/cm2 at a bias of −5 V was obtained. However, when the temperature was 900 °C, the reverse leakage current was increased by more than three orders of magnitude. This was attributed to the formation of a Ti-rich phase at the surface by the reaction between the Co–Ti–Si phase and CoSi2 at 900 °C. The Ti-rich phase acted as a dopant sink, and suppressed the diffusion of boron to the CoSi2/Si interface. This caused very shallow junction depth with a low boron concentration at the region directly below the Ti-rich phase, followed by generation of a large reverse leakage current.

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Schottky Barrier Height Enhancement on M‐P+‐N Structures Including Free‐Carriers

Abstract: not Available.

Cited by 29 publications

References 8 publications

Sulphide passivation of GaAs: the role of the sulphur chemical activity

Sulphide passivation of GaAs: the role of the sulphur chemical activity

Local Electric Fields in Silicided Shallow Junctions

Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

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