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The conductivity of -doped emeraldine polymers is studied as a function of temperature in the range . The dopant concentration of the samples varies between 0.1 M and 1.0 M. The temperature dependence of the dc electrical conductivity gives evidence for a transport mechanism based on variable-range hopping in three dimensions. Using Mott's formula for the dc conductivity, physically meaningful values of the density of states at the Fermi energy, the hopping energy and hopping distance are calculated.

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A presente pesquisa tem como objetivo analisar o discurso do presidente Jair Bolsonaro, no Instagram, sobre o Covid-19, na perspectiva da pós-verdade. Dessa forma, este artigo traz um debate acerca do descrédito da ciência e do uso da desinformação em um momento importante como o da pandemia do novo coronavírus. A análise traz como recorte temporal o período do início da contaminação no Brasil, que vai do mês de março ao mês de abril de 2020. Por meio da análise de conteúdo, pode-se classificar o corpus publicado em 26 categorias, as quais permitiram mapear as narrativas predominantes de Bolsonaro nas redes sociais, em que pese a contraposição às instituições científicas

The electrical properties of Al/PANI-DBSA/ABS/Au blend with PANI (5%) w/w have been investigated by using of current-voltage (I-V) measurements, in a temperature range of 100-313 K. The analysis of I-V characteristics in the forward direction was based on thermionic emission mechanism for applied electrical field till $3 3 10 2 V/cm. The thickness dependence of the current-voltage relationship, clearly demonstrates that the electrical current for larger fields is space charge limited current (SCLC). Temperature dependences of the ideality factor, barrier height, and series resistance have been calculated. The mobility of carriers which is temperature dependent was calculated using the trap free SCLC as 1.53 3 10 24 cm 2 V 21 s 21 at room temperature. V C 2014Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40688.

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Metal-poly (p-phenylene) Schottky barriers, in which the metal and semiconductor are separated by a thin interfacial film, exhibit nearly ideal diode behaviour in the dark. The current-voltage characteristics have been studied in the range 20-300 degrees C and the current transport properties in the barriers are found to be in agreement with the diffusion theory of metal-semiconductor rectification.

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