The conductivity of -doped emeraldine polymers is studied as a function of temperature in the range . The dopant concentration of the samples varies between 0.1 M and 1.0 M. The temperature dependence of the dc electrical conductivity gives evidence for a transport mechanism based on variable-range hopping in three dimensions. Using Mott's formula for the dc conductivity, physically meaningful values of the density of states at the Fermi energy, the hopping energy and hopping distance are calculated.

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Metal-poly (p-phenylene) Schottky barriers, in which the metal and semiconductor are separated by a thin interfacial film, exhibit nearly ideal diode behaviour in the dark. The current-voltage characteristics have been studied in the range 20-300 degrees C and the current transport properties in the barriers are found to be in agreement with the diffusion theory of metal-semiconductor rectification.

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