Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz, G. P.; Gualtieri, G. J.; Bonner, W. A.

doi:10.1149/1.2108698

Cited by 19 publications

(7 citation statements)

References 26 publications

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“…This model is able to describe the effective barrier height dependence on dopant density and Shannon-layer thickness in very good agreement with the experimental results of Kordos et al [11]. In the lower regimes of dopant density and layer thickness, the three models of Shannon [7], Roy and Daw [8] and Schwartz and Gualtieri [10] are in close agreement with each other.…”

Section: Introductionsupporting

confidence: 78%

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Schottky-Barrier Enhancement Limit for GaAs MESFETs

Kumar

Tandon

Sarkar

2000

phys. stat. sol. (a)

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Section: Introductionsupporting

confidence: 78%

“…By their approach, the saturated value turns out to be in excess of band-gap. A more realistic model is the free-carrier model of Schwartz and Gualtieri [10]. This model takes into account the presence of free carriers (electrons and holes) throughout the device, including Shannon layer.…”

Section: Introductionmentioning

confidence: 99%

Schottky-Barrier Enhancement Limit for GaAs MESFETs

Kumar

Tandon

Sarkar

2000

phys. stat. sol. (a)

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“…For un‐irradiated n ‐GaAs, n ~ 1 × 10 18 cm −3 and V B = 0.78 eV . For doped III–V semiconductors δW is ~50 Å .…”

Section: Discussionmentioning

confidence: 99%

Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

Mishra

Singh

Bhattacharya

et al. 2016

J Raman Spectroscopy

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Raman spectroscopy and Hall measurements have been carried out to investigate the differences in near‐surface charge carrier modulation in high energy (~100 MeV) silicon ion (Si8+) and oxygen ion (O7+) irradiated n‐GaAs. In the case of O ion irradiation, the observed decrease in carrier concentration with increase in ion fluence could be explained in the view of charge compensation by possible point defect trap centers, which can form because of elastic collisions of high energy ions with the target nuclei. In Si irradiated n‐GaAs one would expect the carrier compensation to occur at a fluence of 2.5 × 1013 ions/cm2, if the same mechanism of acceptor state formation, as in case of O irradiation, is considered. However, we observe the charge compensation in this system at a fluence of 5 × 1012 ions/cm2. We discuss the role of the complex defect states, which are formed because of the interaction of the primary point defects, in determining carrier concentration in a Si irradiated n‐GaAs wafer. The above results are combined with the reported data from the literature for high energy silver ion irradiated n‐GaAs, in order to illustrate the effect of both electronic and nuclear energy loss on trap creation and charge compensation. Copyright © 2016 John Wiley & Sons, Ltd.

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“…The wafers were then rinsed in boiling isopropanol, visually inspected briefly for any sign of surface degradation, and loaded into a vacion-pumped vacuum-chamber for Auger analysis and metal deposition. Samples prepared in this fashion are relatively free of carbon and oxide contamination and yield reproducible barrier heights on nondiffused wafers (5). Au dots were deposited through a Mo mask to define the diode array (10 mil diam dots) necessary for electrical characterization.…”

Section: Methodsmentioning

confidence: 99%

“…We have recently demonstrated enhanced Schottky barrier structures on n-InP formed by shallow diffusion of a thin, highly doped surface p* layer, creating a so-called metal-p'-n or surface-doped barrier (5). Briefly, this technique consists of the deposition of a thin (~150A) Zn overlayer onto a chemically etched InP surface followed by a short anneal prior to the gate metal deposition, all performed in UHV.…”

mentioning

confidence: 99%

Metal‐p+‐n Enhanced Schottky Barriers on (100) InP Formed by an Open Tube Diffusion Technique

Gualtieri

Schwartz

Zydzik

et al. 1986

J. Electrochem. Soc.

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Rapid thermal processing has been utilized for shallow diffusions from ZnF2/SiO2 , ZnF2/Al2O3 , or CdF2/SiO2 structures to increase the effective barrier height of Au‐(100) normaln‐normalInP Schottky diodes. For diffusion from a ZnF2/SiO2 structure, an increase in apparent barrier height of 0.2–0.34 eV with a reduction in reverse leakage of two orders of magnitude is obtained. High apparent barriers are also observed using ZnF2/Al2O3 , but, in general, the electrical characteristics are poor. Near‐ideal characteristics are observed for diffusion from CdF2/SiO2 layers, yielding a 0.11 eV barrier increase and a reduction in reverse current by a factor of ≈60. This corresponds to a p+ layer width of ⩽120Å and an acceptor to bulk donor ratio NA/ND≈150 . However, degradation of the electrical characteristics due to dopant‐substrate reactions limits the enhancement attainable with the CdF2 source. Methods for avoiding this problem with similar structures are proposed. A nonthermionic current component is observed for large barrier enhancements (>0.1 eV), causing the reverse current to saturate at a value larger than expected from the apparent barrier height determined by the forward current‐voltage characteristics. Possible origins for this excess current are discussed.

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Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Cited by 19 publications

References 26 publications

Schottky-Barrier Enhancement Limit for GaAs MESFETs

Schottky-Barrier Enhancement Limit for GaAs MESFETs

Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

Metal‐p+‐n Enhanced Schottky Barriers on (100) InP Formed by an Open Tube Diffusion Technique

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