Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Abstract

Articles you may be interested inRole of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metaloxide-semiconductor capacitor

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

“…6 and 7, respectively. Sulfur passivation of the GaAs surface is beneficial to suppressing the growth of Ga/As oxides [24], but not completely. In Fig.…”

Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

“…In addition, when insulator layer thickness is sufficiently large enough (≥500 Å), metal-insulator/oxide-semiconductor structure acts as a MOS capacitor, rather than a MIS type SBD. Due to their benefits mentioned above, instead of traditional low-k SiO 2 , various high-k dielectric materials such as TiO 2 [6], Gd 2 O 3 [7], ZrO 2 [8] and Al 2 O 3 [9] are studied in GaAs based devices nowadays. Among these dielectric materials, TiO 2 can be considered as more encouraging candidate with a relatively higher dielectric constant (k value between 35 and 100).…”

Native defect formation and migration in monoclinic zirconium dioxide

“…Here we consider the growth of ZrO 2 on top of GaAs [24][25][26], whose band gap will limit the range of possible Fermi level within oxide. Fig.…”