Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

Şafak-Asar, Yasemin; Asar, T.; Altındal, Ş.; Özçelik, Süleyman

doi:10.1016/j.jallcom.2014.12.170

Cited by 90 publications

(27 citation statements)

References 51 publications

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“…Surface morphology of the sample was characterized by atomic force microscopy (AFM) measurements. These results were given in our previous paper [37]. After SIMS, XRD and AFM measurements, the 2-mm dot-shaped AuZn rectifier contacts with 1000 Å thickness were evaporated onto TiO 2 thin film at room temperature.…”

Section: Methodsmentioning

confidence: 78%

“…(AuZn)/TiO 2 /p-GaAs MIS structures were fabricated as described in our previous paper [37]. Nevertheless, it is useful to provide information about fabrication processes in this study as well.…”

Section: Methodsmentioning

confidence: 99%

“…Nevertheless, it is useful to provide information about fabrication processes in this study as well. Prior to the fabrication, a 625-µm thickness, (110) orientation, berylliumdoped (p-type) GaAs substrate was degreased in organic solvents and then etched within specially prepared acidic solutions and finally quenched in deionized water (DI-H 2 O) as given before [37]. Then, substrate was loaded into the DC magnetron sputtering system.…”

Section: Methodsmentioning

confidence: 99%

“…A metal semiconductor structure becomes a metal-insulator/oxide-semiconductor (MIS/MOS) structure by adding an insulator/oxide layer such as TiO 2 [37][38][39], SiO 2 [40,41], Si 3 N 4 [42] or an organic layer [43]. Such an insulator layer not only prevents the reaction and inter-diffusion between metal and semiconductor, but also alleviates the electric field reduction issue of these structures.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO₂/p-GaAs(110) MIS structures

Asar

Altındal

et al. 2015

Philosophical Magazine

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In this study, we investigated temperature and voltage dependence of dielectric properties and ac electrical conductivity (σ ac ) of (AuZn)/TiO 2 /p-GaAs(110) metal-insulator-semiconductor structures in the temperature range of 80-290 K using the capacitance-voltage C À V ð Þ and conductance-voltage ð G x À V Þ measurements at 1 MHz. The intersection/crossing behaviour of C-V plots at sufficiently high forward biases and the increase in σ ac with increasing temperature was attributed to the lack of sufficient number of enough free charge carriers at low temperatures. The values of the dielectric constant (ε′), dielectric loss (ε″), loss tangent tan d ð Þ, ac electrical conductivity (σ ac ), the real and imaginary parts of electric modulus (M 0 ; M 00 ) were found to be strong functions of temperature and applied bias voltage. The Cole-Cole plots between M 0 vs: M 00 have shown only one semicircle for each temperature. This indicates one of the relaxation processes was suppressed and this can be attributed to the surface polarization effect. On the other hand, M 00 vs. V plot has a peak for each temperature. The Ln r ac ð Þ vs. q kT plots revealed two linear regions with different slopes for sufficiently high forward biases (0.0, 0.5, and 1.0 V) which correspond to low (80-200 K) and moderate/intermediate (230-290 K) temperatures. Thus, the values of activation energy (E a ) were obtained from the slope of these Arrhenius plots for two linear regions as 87.3 and 3.4 meV, respectively, at 1.0 V. On the other hand, Mott plots have only one linear region except for 260 and 290 K and Mott parameters were determined from these plots at 0.0, 0.5 and 1.0 V.

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Section: Methodsmentioning

confidence: 78%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO₂/p-GaAs(110) MIS structures

Asar

Altındal

et al. 2015

Philosophical Magazine

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“…23 DC magnetronsputtered 30 nm thick TiO 2 films on p-GaAs (110) in the MIS structure showed the universal power-law dependence of AC conductivity r ac (f, T) on f (1 kHz £ f £ 1 MHz) for a temperature range of 80 K ‡ T ‡ 290 K. The results imply the existence of non-random distribution of hopping centers and surface states at the GaAs/TiO 2 interface. 24,25 However, reports of AC impedance measurements on MIS structures involving sol-gel TiO 2 films are limited. The present article presents the results of AC electrical measurements to study the dielectric behavior of TiO 2 on (100) p-type silicon substrates.…”

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confidence: 99%

Dielectric Measurements on Sol–Gel Derived Titania Films

Çapan

Ray

2017

Journal of Elec Materi

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Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol-gel derived anatase titania films on ultrasonically cleaned (100) p-silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-dependent behavior of the AC conductivity r ac (f, T) obeys the universal power law, and the values of the effective hopping barrier and hopping distance were found to be 0.79 eV and 6.7 9 10 À11 m from an analysis due to the correlated barrier-hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of 41.5 meV.

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Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

Yerişkin

Balbaşı

Tataroğlu

2016

J of Applied Polymer Sci

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In order to increase the capacitance of Au/n-Si (MS) structure, 7% graphene doped PVA was coated on n-Si as an interfacial layer. The measured data of capacitance (C) and conductance (G/x) of Au/7% graphene doped-PVA/n-Si (MPS) structure was utilized for the calculation of real and imaginary parts of complex permittivity (e* 5 e 0 2 je 00 ), loss tangent (tand), complex electric modulus (M* 5 M 0 1 jM 00 ), and electrical conductivity (r). The admittance measurements (C and G/x) were carried out in the frequency range of 0.5 kHz to 1 MHz at room temperature. Frequency dependence of the dielectric constant (e 0 ), dielectric loss (e 00 ) and tand shows a dispersive behavior at low frequencies. This behavior was explained by Maxwell-Wagner relaxation. Due to the dipolar and the interfacial polarizations, as well as the surface states (N ss ) and the interfacial PVA layer, the parameters exhibited a strong dependence on frequency and applied bias voltage. The r versus log(f) plot exhibited both low and high frequency dispersion phenomena such that at low frequencies r value corresponding to the dc conductivity (r dc ), but at high frequencies it corresponds to the ac conductivity (r ac ). M 0 and M 00 , both, have low values in the low frequency region. However, an increase is observed with the increasing frequency due to the short-range mobility of charge carriers. As a result, the change in dielectric parameters and electric modulus with frequency is the result of relaxation phenomena and surface states.

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Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

Cited by 90 publications

References 51 publications

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO₂/p-GaAs(110) MIS structures

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO₂/p-GaAs(110) MIS structures

Dielectric Measurements on Sol–Gel Derived Titania Films

Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

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Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

Cited by 90 publications

References 51 publications

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

Dielectric Measurements on Sol–Gel Derived Titania Films

Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

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Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO₂/p-GaAs(110) MIS structures

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO₂/p-GaAs(110) MIS structures