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The GaAs 1−x P x /GaAs ternary alloys were grown on n-GaAs (100) substrate with different P/As flux ratio by solid source molecular beam epitaxy (MBE) system using GaP decomposition source. In order to obtain smooth interface and lattice mismatch structures we have used both continuous growth (CG) and graded growth (GG) methods. The range of lattice parameters in the graded epilayer and phosphorous composition in the samples were determined by the high-resolution X-ray diffraction (HRXRD) rocking curve simulation. The critical energy points of the interband transition edges of the structures were determined by line-shape analyses on their dielectric functions (DF) using spectroscopic ellipsometry (SE) measurements at a room temperature in the 0.5-5 eV photon energy region. Also, surface and interface phenomenon of the structures were discussed by using ellipsometric data. Phosphorous compositions of the ternary alloys were also calculated by photoluminescence (PL) emission peak positions at room temperature and using the bowing parameter obtained by fitting to critical points.

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The purpose of this study is to analyze interface states (N ss ) in Au/TiO 2 (Rutile)/n-Si Schottky barrier diodes (SBDs). TiO 2 was deposited on a n-Si substrate by reactive magnetron sputtering and annealed at 900• C for 4 h in atmosphere to obtain rutile phase